Gang LYU
.GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions
.Substrate and Trench Design for GaN-on-EBUS Power IC Platform
.6-in Dual-Gate Ring Commutated Thyristor for DC Circuit Breakers
.Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device, IEEE Transactions on Power Electronics
.A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
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