北京航空航天大学主页平台系统 Gang LYU--Home-- A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Gang LYU

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Doctoral Degree in Engineering

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A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Release time:2023-09-01Hits:

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Pre One:: Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device, IEEE Transactions on Power Electronics