中文
LOGIN
Home
Research Field
Open Course
Research Project
Paper
Honor and Reward
Student Information
Enrolment Information
More
Gang LYU
Professor
Doctoral Degree in Engineering
· Paper
Current position:
Home
>
Paper
Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device, IEEE Transactions on Power Electronics
Release time:2023-09-01
Hits:
Translation or Not:
no
Pre One:
6-in Dual-Gate Ring Commutated Thyristor for DC Circuit Breakers
Next One:
A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs