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发表刊物：Nanoscale
关键字：自旋电子学，磁性隧道结，存算一体
摘要：Perpendicular magnetic tunnel junctions (p-MTJs) provide advantages such as infinite endurance, high thermal stability, and fast and low-power switching. They are considered as a promising non-volatile memory device to build non-von Neumann computing paradigms and definitively overcome the power bottleneck. Numerous design proposals have been made for p-MTJ logic, but a few physical realizations have been reported. In this paper, we present the experimental implementation of universal stateful logic gates such as “OR”, “AND”, and material implication (“IMP”) by connecting two nanoscale p-MTJs.
合写作者：Wenlong Cai,Yizheng Liu
第一作者：Kaihua Cao
论文类型：基础研究
通讯作者：Weisheng Zhao
论文编号：10.1039/c8nr05928d
一级学科：电子科学与技术
文献类型：期刊
卷号：10
期号：45
页面范围：21225-21230
ISSN号：2040-3364
是否译文：否
CN号：451738900031
发表时间：2018-12-07
收录刊物：SCI
发布期刊链接：https://pubs.rsc.org/en/content/articlelanding/2018/NR/C8NR05928D#!divAbstract