1.基本信息

北京航空航天大学微电子学院教师。2014年获青岛大学微电子学专业学士学位，同年进入北京航空航天大学电子信息工程学院攻读博士学位。2015-2019年同时在中国科学院微电子研究所先导工艺研发中心联合培养，2019年获北京航空航天大学微电子学与固体电子专业博士学位，随后在北京航空航天大学微电子学院任教。

主要研究方向：STT/SOT-MRAM工艺研究；自旋电子器件设计、制备及测试表征；“存算一体”技术研究。

2.科研项目

科研服务：

1. 1.北航青岛研究院微电子分院院长助理分管8英寸自旋芯片后道工艺平台，平台已建成700多平米超净间、设备总值超1亿，可服务8英寸自旋芯片（磁存储器、磁传感器、自旋电子学器件）研发。

科研项目：

1. 1.基于磁隧道结的概率计算器件研究-青年科学基金项目(在研)-主持

2. 2.新型自旋轨道矩材料与高性能存内计算器件-科技部重点研发计划（在研）-核心骨干

3. 3.先进磁存储器件制备及可靠性测试方法研究-智芯微电子科技有限公司科研项目（在研）-主持

3.科研成果

1. W. Cai, M. Wang, K. Cao*, H. Yang, S. Peng, H. Li and W. Zhao*, Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci. China Inf. Sci., 2022, 65, 1–7.
   

2. Z. Guo, J. Yin, Y. Bai, D. Zhu, K. Shi, G. Wang, K. Cao* and W. Zhao*, Spintronics for Energy- Efficient Computing: An Overview and Outlook. Proc. IEEE, 2021, 109, 1398–1417.

3. Y. Wang, D. Zhao, Y. Chen, Z. Fu, H. Zhang, Z. Zhou, Y. Wan, C. Pan, F. Liu, Y. Yuan and K. Cao*, Fabrication and Reliability Analysis of Nanoscale Magnetic Tunnel Junctions. Spin, 2021, 11, 1–6.

4. D. Zhu, Z. Guo, A. Du, D. Xiong, R. Xiao, W. Cai, K. Shi, S. Peng, K. Cao, S. Lu, D. Zhu, G. Wang, H. Liu, Q. Leng and W. Zhao, First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias. Int. Electron Devices Meet., 2021, 17.5.1-17.5.4.

5. W. Cai, K. Shi, Y. Zhuo, D. Zhu, Y. Huang, J. Yin, K. Cao, Z. Wang, Z. Guo, Z. Wang, G. Wang and W. Zhao*, Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques. IEEE Electron Device Lett., 2021, 42, 704–707.
   

6. K. Shi, W. Cai, Y. Zhuo, D. Zhu, Y. Huang, J. Yin, K. Cao, Z. Wang, Z. Guo, Z. Wanga, G. Wangb and W. Zhao, Experimental Demonstration of NAND-like spin-torque Memory Unit. IEEE Electron Device Lett., 2021, 42, 513–516.

7. R. Chen, X. Wang, H. Cheng, K.-J. Lee, D. Xiong, J.-Y. Kim, S. Li, H. Yang, H. Zhang, K. Cao, M. Kläui, S. Peng, X. Zhang and W. Zhao*, Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures. Cell Reports Phys. Sci., 2021, 2, 1–18.

8. J. Wei, B. Fang, W. Wu, K. Cao*, H. H. Chen, Y. Zhang, Z. Zeng, H. Wu, M. Bai and W. Zhao, Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators. Nanotechnology, 2020, 31, 1–7.

9. K. Zhang, K. Cao, Y. Zhang, Z. Huang, W. Cai, J. Wang, J. Nan, G. Wang, Z. Zheng, L. Chen, Z. Zhang, Y. Zhang, S. Yan and W. Zhao, Rectified Tunnel Magnetoresistance Device with High On/Off Ratio for In-Memory Computing. IEEE Electron Device Lett., 2020, 41, 928–931.

10. K. Cao, H. Cui, Y. Zhang, H. Xiong, J. Wei, L. Wang, W. Cai, Y. Liu, P. Liu, X. He, J. Li, G. Bai, J. Yu, J. Han, J. Gao, Q. Jiang, Y. Hu, L. Li, B. Tang, Y. Zhang, P. Zhang, Q. Zhang, S. Liu, Y. Lu, T. Yang, J. Li, H. H. Radamson, C. Zhao and W. Zhao, Novel metallization processes for sub-100 nm magnetic tunnel junction devices. Microelectron. Eng., 2019, 209, 6–9.

11. J. Wei, K. Cao, H. Cui, K. Shi, W. Cai, Y. Jing, C. Zhao and W. Zhao, All Perpendicular Spin Nano-oscillators with Composite Free Layer. SPIN, 2019, 9, 1940010-4

3.教学项目

1.主讲本科生核心专业课《集成电路工艺原理》

2.参与讲授本科生通识课《集成电路导论》

• [1] “存算一体”器件
• [2] 自旋电子器件设计、制备及表征
• [3] STT/SOT-MRAM芯片制备工艺