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彭守仲 ( 教授 ) 赞
的个人主页 http://shi.buaa.edu.cn/shouzhong/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：教师/院长助理/铸芯党支部书记

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[11] .Large voltage-controlled magnetic anisotropy in the SrTiO3/Fe/Cu structure.[期刊]:Applied Physics Letters,2017,111(15):152403
[12] .Interfacial perpendicular magnetic anisotropy in sub-20 nm tunnel junctions for large-capacity spin-transfer torque magnetic random-access memory.[期刊]:IEEE Magnetics Letters,2017,8:3105805
[13] .Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.[期刊]:Scientific reports,2015,5:18173
[14] .Magnetic tunnel junctions for spintronics: principles and applications.[期刊]:Wiley Encyclopedia of Electrical and Electronics Engineering,2014,1936:1-16
[15] .First-principles investigation of magnetocrystalline anisotropy oscillations in Co 2 FeAl/Ta heterostructures.[期刊]:Physical Review B,2018,97(5):054420
[16] .A multilevel cell for stt-mram realized by capping layer adjustment:IEEE Transactions on Magnetics,2015,51(11):3101604
[17] .High tunnel magnetoresistance in Mo/CoFe/MgO magnetic tunnel junction: A first-principles study.[期刊]:IEEE Transactions on Magnetics,2017,53(11):1300504
[18] .STT-MRAM 存储器的研究进展.[期刊]:中国科学: 物理学, 力学, 天文学,2016,46(10):107306
[19] .Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions.[期刊]:Applied Physics Letters,2016,109(24):242403
[20] .Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect.[期刊]:IEEE Transactions on Electron Devices,2017,64(12):4919

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