Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect
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发表刊物:IEEE Transactions on Electron Devices
论文类型:基础研究
文献类型:期刊
卷号:64
期号:12
页面范围:4919
是否译文:否
CN号:null
发表时间:2017-11-08
收录刊物:SCI
发布期刊链接:
https://ieeexplore.ieee.org/abstract/document/8098650/