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Haichang Lu

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Associate Professor  
Supervisor of Doctorate Candidates  
Supervisor of Master's Candidates  

Main positions:副教授

Paper

nsertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors.

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Journal:Nanoscale

Indexed by:Unit Twenty Basic Research

First-Level Discipline:Materials Science and Engineering

Document Type:J

Volume:11

Issue:11

Page Number:4811

Translation or Not:no

CN No.:null

Date of Publication:2019-02-13

Included Journals:SCI

Pre One:Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.

Next One:Modelling of Gap State Passivation and Fermi Level De-pinning in Solar Cells.
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