NAME

Haichang Lu

Paper

nsertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors.
  • Hits:
  • Journal:

    Nanoscale

  • Indexed by:

    Unit Twenty Basic Research

  • First-Level Discipline:

    Materials Science and Engineering

  • Document Type:

    J

  • Volume:

    11

  • Issue:

    11

  • Page Number:

    4811

  • Translation or Not:

    no

  • CN No.:

    null

  • Date of Publication:

    2019-02-13

  • Included Journals:

    SCI

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