Haichang Lu obtained his Ph.D. degree from the University of Cambridge, Engineering department division B in 2018. He obtained his bachelor's degree from Peking University in EECS.

He worked as a research associate at Cambridge University from 2018 to 2020. 

PEER-REVIEWED PUBLICATIONS

1.  H Lu, S J Clark, Y Guo and J Robertson, Modelling the Enthalpy change and Transition Temperature dependence the Metal-Insulator Transition in Pure and Doped Vanadium Dioxide. Phys. Chem. Chem. Phys.22, 13474 (2020).

2.  Z Zhang, Y Guo, H Lu, S J Clark and J Robertson, Hybrid bands offset calculation for heterojunction interfaces between disparate semiconductors. Appl. Phys. Lett. 116, 131602 (2020).

3.  H Lu, Y Guo and J Robertson, Electronic Structures of metallic and insulating phases of Vanadium Oxide and its Oxide Alloying. Phys. Rev. Mat. 3, 094603 (2019).

4.  H Lu and J Robertson, Density Functional Theory Studies of the Metal-Insulator Transition in Vanadium Dioxide Alloys. Phys. Status Solidi B 1900210 (2019).

5.  H Lu, Y Guo, H Li and J Robertson, Modelling of Gap State Passivation and Fermi Level De-pinning in Solar Cells. Appl. Phys. Lett. 114, 222106 (2019).

6.  S Zheng, H Lu, H Liu, D Liu and J Robertson, Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors. Nanoscale, 11, 4811-4821 (2019).

7.  H Lu, Y Guo, J W Martin, M Kraft and J Robertson, Atomic structure and Electronic structure of disordered Graphitic Carbon Nitride. Carbon, 147, 483-489 (2019).

8.  H Lu, A Kummel and J Robertson, Passivating the sulfur vacancy in monolayer MoS2. APL Materials, 6, 066104 (2018).

9.  H Lu, Y Guo and J Robertson, Band edge States, Intrinsic Defects and Dopants in Monolayer HfS2 and SnS2. Appl. Phys. Lett. 112, 062105 (2018).

10. S Lee, A Nathan, J Alexander-Webber, P Braeuninger-Weimer, A Sagade, H Lu, D Hasko, J Robertson, S Hofmann, Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature. ACS Appl. Mater. Interfaces, 10, 10618 (2018).

11. H Lu, Y Guo and J Robertson, Charge transfer doping of graphene without degrading carrier mobility. J. Appl. Phys. 121, 224304 (2017).

12. H Lu, Y Guo and J Robertson, Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides. J. Appl. Phys. 120, 065302 (2016).

13. R Pan, X Yue, X Xu, H Lu and X Zhou, Multiple photon-echo rephasing of coherent matter waves. Phys. Lett. A, 379, 691 (2015).

14. H Lu, Y Zhai, R Pan and S Yang, An effective method of accelerating Bose gases using magnetic coils. Chinese Physics B, 9, 033 (2014).

CONFERENCE CONTRIBUTIONS

1.       H Lu, VO2 Metal-Insulator material: Density Functional Studies of Alloying to vary Band gap and TC, EPCOS, Grenoble, France, September 2019 (Poster).

2.       H Lu, ab-initio modelling of VO2, 5^th Phase Change Switch Consortium Meeting, Halle, Germany, August 2019 (Talk).

3.       H Lu, Y Guo and J Robertson, MIGS Gap State Passivation and Fermi Level De-pinning for Solar Cell Contacts, INFOS, Cambridge, UK, July 2019 (Talk).

4.       H Lu, Y Guo and J Robertson, VO2 Metal-Insulator material; Density Functional Studies of Alloying, INFOS, Cambridge, UK, July 2019 (Poster).

5.       H Lu and J Robertson, Density Functional Theory Studies of the Nature of Phase-Transition in Vanadium Dioxide alloys, International Winter School on Electronic Properties of Novel Materials (IWEPNM), Kirchberg in Tirol, Austria, March 2019 (Poster).

6.       J Robertson and H Lu, Methods of passivating Sulfur vacancies in 2D MoS2, International Winter School on Electronic Properties of Novel Materials (IWEPNM), Kirchberg in Tirol, Austria, March 2019 (Poster).

7.       H Lu, Y Guo, H Li and J Robertson, Si photovoltaic contacts – passivation or Fermi level unpinning, Workshop on Dielectrics in Microelectronics (WODIM), Berlin, Germany, June 2018 (Talk).

8.       H Lu, Y Guo and J Robertson, Band Edge States, Defects and Dopants in Layered Semiconductors HfS2 and SnS2, Materials Research Society spring meeting, Phoenix, US, April 2018 (Talk).

9.       H Lu and J Robertson, Methods of passivating Sulfur vacancies in 2D MoS2, Materials Research Society spring meeting, Phoenix, US, April 2018 (Talk).

10.   H Lu and J Robertson, Methods of passivating the sulfur vacancy in 2D MoS2 48th IEEE Semiconductor Interface Specialists Conference, San Diego, US, December 2017 (Poster).

11.   H Lu, Y Guo and J Robertson, Chemistry vs Dimensionality Effects in 2D semiconductor Contacts, E-MRS 2016 Fall Meeting, Warsaw, Poland, September 2016 (Talk).

JOURNAL REFEREEING: ACS Nano, Microelectronic Engineering