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所属单位:北京航空航天大学
发表刊物:Nanotechnology
刊物所在地:英国
摘要:Magnetic sensors based on magnetoresistance effects have promising application prospects due to their excellent sensitivity and their advantages in terms of integration. However, the competition between higher sensitivity and a larger measuring range remains a problem. Here, we propose a novel mechanism for designing magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic domain wall in the free layer of a spin valve or a magnetic tunnel junction. The performances of devices based on this mechanism, such as the sensitivity and ......
第一作者:张学莹
论文类型:应用研究
通讯作者:赵巍胜
一级学科:电子科学与技术
文献类型:期刊
卷号:29
期号:36
页面范围:365502
是否译文:否
CN号:null
发表时间:2018-07-02
收录刊物:SCI
发布期刊链接:
http://stacks.iop.org/0957-4484/29/i=36/a=365502?key=crossref.dc9ec183d078213104df9be659713a57
上一条: Y. Zhang, X. Zhang, J. Hu, J. Nan, Z. Zheng, Z. Zhang, Y. Zhang, N. Vernier, D. Ravelosona, and W. Zhao, Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions, Sci. Rep. 6, 35062 (2016).
下一条: Direct Observation of Domain-Wall Surface Tension by Deflating or Inflating a Magnetic Bubble