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Zhang Xueying
  • The basic information

    Lecturer Supervisor of Master's Candidates:
    Academic Titles:Lecturer
    Other Post:assistant to the dean of Beihang-Goertek joint institute of microelectronics in Qingdao
    Date of Birth:October 8, 1987
    Alma Mater:Beihang University / University Paris-Saclay
    Degree:Doctor's Degree
    School/Department:assistant to the dean
    Discipline:Electronic Science and Technology
    Business Address:Floor 5, building 6, Qingdao Research Institute of Beihang University
    Contact Information:+8615810541952
  • Resume

    Xueying Zhang, lecturer of Beihang University. He was graduated from the Unviversity Paris-Saclay in May 2018 and got the Ph.D degree on physics. He was graduated from the Beihang Unversity in June 2018 and got the Ph.D degree of engineering. He workes as lecturer in the school of microelectronics of Beihang Univerity from July 2018. His main research topics are: Magneto-Optical Kerr microscopy, magnetic domain wall motion, the design of novel spintronical devices, magnetic sensor etc. 


    [1] X. Zhang, W. Cai, X. Zhang, Z. Wang, Z. Li, Y. Zhang, K. Cao, N. Lei, W. Kang, Y. Zhang, H. Yu, Y. Zhou, and W. Zhao, Skyrmions in Magnetic Tunnel Junctions, ACS Appl. Mater. Interfaces 10, 16887 (2018).

    [2] A. Cao, X. Zhang, B. Koopmans, S. Peng, Y. Zhang, Z. Wang, S. Yan, H. Yang, and W. Zhao, Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness, Nanoscale 10, 12062 (2018).

    [3] X. Zhang, N. Vernier, W. Zhao, H. Yu, L. Vila, Y. Zhang, and D. Ravelosona, Direct Observation of Domain-Wall Surface Tension by Deflating or Inflating a Magnetic Bubble, Phys. Rev. Appl. 9, 024032 (2018).

    [4] X. Zhang, N. Vernier, Z. Cao, Q. Leng, A. Cao, D. Ravelosona, and W. Zhao, Magnetoresistive sensors based on the elasticity of domain walls, Nanotechnology 29, 365502 (2018).

    [5] Y. Zhang, X. Zhang, N. Vernier, Z. Zhang, G. Agnus, J.-R. Coudevylle, X. Lin, Y. Zhang, Y. Zhang, W. Zhao, and D. Ravelosona, Domain-Wall Motion Driven by Laplace Pressure in CoFeB/MgO Nanodots with Perpendicular Anisotropy, Phys. Rev. Appl. 9, 064027 (2018).

    [6] L. Zhang, X. Zhang, M. Wang, Z. Wang, W. Cai, K. Cao, D. Zhu, H. Yang, and W. Zhao, Size dependence of the spin-orbit torque induced magnetic reversal in W/CoFeB/MgO nanostructures, Appl. Phys. Lett. 112, 142410 (2018).

    [7] X. Zhang, N. Vernier, W. Zhao, L. Vila, and D. Ravelosona, Extrinsic pinning of magnetic domain walls in CoFeB-MgO nanowires with perpendicular anisotropy, AIP Adv. 8, 056307 (2018).

    [8] Y. Zhang, X. Zhang, J. Hu, J. Nan, Z. Zheng, Z. Zhang, Y. Zhang, N. Vernier, D. Ravelosona, and W. Zhao, Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions, Sci. Rep. 6, 35062 (2016).

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