北京航空航天大学主页平台系统张悦--中文主页-- W. Zhao, Y. Zhang, J-O Klein, D. Querlioz, D. Chabi, D. Ravelosona, C. Chappert, J.M Portal, M. Bocquet, H. Aziza, D. Deleruyelle and C. Muller, “Crossbar Architecture based on 2R Complementary Resistive Switching Memory Cell”, IEEE/ACM International Symposium on Nanoscale Architectures (Nanoarch), pp. 85-92, July, 2012.

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个人信息

张悦

教授

教授博士生导师硕士生导师

电子邮箱：

所在单位：集成电路科学与工程学院

职务：Professor

学历：博士研究生

办公地点：新一馆219

主要任职：常务副院长、党委副书记

论文

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W. Zhao, Y. Zhang, J-O Klein, D. Querlioz, D. Chabi, D. Ravelosona, C. Chappert, J.M Portal, M. Bocquet, H. Aziza, D. Deleruyelle and C. Muller, “Crossbar Architecture based on 2R Complementary Resistive Switching Memory Cell”, IEEE/ACM International Symposium on Nanoscale Architectures (Nanoarch), pp. 85-92, July, 2012.

发布时间：2018-08-27 点击次数：

是否译文：否

上一条：Yue Zhang, Weisheng Zhao, Jacques-Olivier Klein, Wang Kang, Damien Querlioz, Claude Chappert and Dafiné Ravelosona, “Multi-Level Cell Spin Transfer Torque MRAM Based on Stochastic Switching”, IEEE International Conference on Nanotechnology, pp.233-236, Aug, 2013.

下一条：Weisheng Zhao, Y. Zhang, H-P Trinh, J-O Klein, C. Chappert, R. Mantovan, A. Lamperti, R.P. Cowburn, T. Trypiniotis, M. Klaui, J. Heinen, B. Ocker and D.Ravelosona, “Magnetic Domain-Wall Racetrack Memory for high density and fast data Storage”, IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 1-4, Oct, 2012.