姓名：陈磊
性别：男
毕业院校：北京航空航天大学
学位：工学博士学位
所在单位：北航国际创新学院
学科：微电子学与固体电子学
电子邮箱：lei.chen@buaa.edu.cn
已发表学术论文：
[1] Chen, L.; Zhang, K.; Li, B.; Hong, B.; Huang, W.; He, Y.; Feng, X.; Zhang, Z.; Lin, K.; Zhao, W.; Zhang, Y., Engineering symmetry breaking enables efficient bulk spin-orbit torque-driven perpendicular magnetization switching[J]. Advanced Functional Materials, 2024, 34(2): 2308823. DOI: 10.1002/adfm.202308823.（SCI Q1, IF: 19.0@2023）
[2] Zhang, K.; Chen, L.; Zhang, Y.; Hong, B.; He, Y.; Lin, K.; Zhang, Z.; Zheng, Z.; Feng, X.; Zhang, Y.; Otani, Y.; Zhao, W., Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers[J]. Applied Physics Reviews, 2022, 9(1): 011407. DOI: 10.1063/5.0067348.（共同一作，SCI Q1, IF: 15.0@2023）
[3] Chen, L.; Huang, W.; Zhang, K.; Li, B.; Zhang, Z.; Feng, X.; Lin, K.; He, Y.; Zhao, W.; Zhang, Y., Orthogonal-bulk-spin-orbit-torque device for all-electrical in-memory computing[J]. IEEE Electron Device Letters, 2024, 45(3): 504-507. DOI: 10.1109/LED. 2024.3354921.（SCI Q2, IF: 4.9@2023）
[4] Zhang, Z.; Lin, K.; Zhang, K.; Feng, X.; Chen, L.; Zhang, Y.; Bournel, A.; Kläui, M.; Zhao, W.; Zhang, Y. Ultra-fast true random number generator based on Ill-posedness nucleation of skyrmion bags in ferrimagnets. IEEE Electron Device Letters, 2024, 45(5): 917-920. DOI: 10.1109/LED.2024.3368210.
[5] Feng, X.; Zheng, Z.; Zhang, Y.; Zhang, Z.; Shao, Y.; He, Y.; Sun, X.; Chen, L.; Zhang, K.; Amiri P. K.; Zhao W., Magneto-ionic control of ferrimagnetic order by oxygen gating[J]. Nano Letters, 2023, 23(11): 4778-4784. DOI: 10.1021/acs.nanolett.3c00107.
[6] Feng, X.; Zheng, Z.; Zhang, Y.; Sun, X.; Zhang, Z.; Wang, G.; Wang, J.; Wei, J.; Vallobra, P.; He, Y.; Wang, Z.; Chen, L.; Lin, K.; Zhang, K.; Xu, Y.; Zhao, W., Ferrimagnets for spintronic devices: from materials to applications[J]. Applied Physics Reviews, 2023, 10(1), 011301. DOI: 10.1063/5.0104618.
[7] Zheng, Z.; Zhang, Z.; Feng, X.; Zhang, K.; Zhang, Y.; He, Y.; Chen, L.; Lin, K.; Zhang, Y.; Amiri, P. K.; Zhao, W., Anomalous thermal-assisted spin-orbit torque-induced magnetization switching for energy-efficient logic-in-memory[J]. ACS Nano, 2022, 16(5): 8264-8272. DOI: 10.1021/acsnano.2c02031.
[8] Zhang, K.; Jia, X.; Cao, K.; Wang, J.; Zhang, Y.; Lin, K.; Chen, L.; Feng, X.; Zheng, Z.; Zhang, Z.; Zhang, Y.; Zhao, W., High on/off ratio spintronic multi‐level memory unit for deep neural network[J]. Advanced Science, 2022, 9(13): 2103357. DOI: 10.1002/advs.202103357.
[9] Zheng, Z.; Zhang, Y.; Lopez-Dominguez, V.; Sánchez-Tejerina, L.; Shi, J.; Feng, X.; Chen, L.; Wang, Z.; Zhang, Z.; Zhang, K.; Hong, B.; Xu, Y.; Zhang, Y.; Carpentieri, M.; Fert, A.; Finocchio, G.; Zhao, W.; Amiri, P. K., Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient[J]. Nature Communications, 2021, 12(1): 4555. DOI: 10.1038/s41467-021-24854-7.
[10] Zhang, Z.; Zheng, Z.; Zhang, Y.; Sun, J.; Lin, K.; Zhang, K.; Feng, X.; Chen, L.; Wang, J.; Wang, G.; Du, Y.; Zhang, Y.; Bournel, A.; Amiri, P. K.; Zhao, W. 3D ferrimagnetic device for multi-bit storage and efficient in-memory computing[J]. IEEE Electron Device Letters, 2021, 42(2): 152-155. DOI: 10.1109/led.2020.3047439.
[11] Zhang, Y.; Wang, J.; Lian, C.; Bai, Y.; Wang, G.; Zhang, Z.; Zheng, Z.; Chen, L.; Zhang, K.; Sirakoulis, G.; Zhang, Y. Time-domain computing in memory using spintronics for energy-efficient convolutional neural network[J]. IEEE Transactions on Circuits and Systems-I: Regular Papers, 2021, 68(3): 1193-1205. DOI: 10.1109/tcsi.2021.3055830.
[12] Zhang, K.; Cao, K.; Zhang, Y.; Huang, Z.; Cai, W.; Wang, J.; Nan, J.; Wang, G.; Zheng, Z.; Chen, L.; Zhang, Z.; Zhang, Y.; Yan, S.; Zhao, W. Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing. IEEE Electron Device Letters, 2020, 41(6): 928-931. DOI: 10.1109/led.2020.2987211.
[13] Zheng, Z.; Zhang, Y.; Zhu, D.; Zhang, K.; Feng, X.; He, Y.; Chen, L.; Zhang, Z.; Liu, D.; Zhang, Y.; Amiri, P. K.; Zhao, W. Perpendicular magnetization switching by large spin-orbit torques from sputtered Bi2Te3[J]. Chinese Physics B, 2020, 29(7): 078505. DOI: 10.1088/1674-1056/ab9439.
[14] Wang, J.; Lian, C.; Bai, Y.; Wang, G.; Zhang, Z.; Zheng, Z.; Chen, L.; Lin, K.; Zhang, K.; Zhang, Y.; Wu, X.; Cotofana, S.; Zhang, Y. A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM[J]. IEEE Transactions on Circuits and Systems-I: Regular Papers, 2020, 67(12): 4247-4258. DOI: 10.1109/tcsi.2020.3020137.
已授权发明专利：
[1] 张昆，陈磊，李博，张悦，赵巍胜，一种自旋轨道矩驱动的梯度合成反铁磁及其存储器应用[P]，中国，专利号：ZL 202210502344.7
[2] 张昆，陈磊，张悦，赵巍胜，基于负阻效应器件实现磁电阻比值放大的电路结构[P]，中国，专利号：ZL 2019 1 1181326.8
自旋电子学；磁存储器；自旋轨道矩器件；存算一体器件
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