一、研究方向。

长期从事自旋轨道矩和反铁磁存储器件的相关研究，以第一作者（含共同）或通讯作者身份在Nature Electronics、IEEE IEDM、Physical Review Applied和Advanced Electronic Materials等国际著名期刊和会议发表了10余篇论文，谷歌学术引用2000余次，获授权美国专利1项、中国发明专利3项。

Google Scholar主页：https://scholar.google.com/citations?user=Fxg5JNQAAAAJ&hl=zh-CN

Researchgate主页：https://www.researchgate.net/profile/Daoqian-Zhu

代表性论文及专利如下：

[R1] D. Zhu#, Z. Guo#, A. Du#, D. Xiong, R. Xiao, W. Cai, K. Shi, S. Peng, K. Cao, S. Lu, D. Zhu, G. Wang, H. Liu, Q. Leng and W. Zhao, First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias, IEEE International Electron Devices Meeting (IEDM), 17.5.1-17.5.4 (2021).

[R2] A. Du#, D. Zhu#, K. Cao#, Z. Zhang#, Z. Guo#, K. Shi, D. Xiong, R. Xiao, W. Cai, J. Yin, S. Lu, C. Zhang, Y. Zhang, S. Luo, A. Fert and W. Zhao, Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions, Nature Electronics, 6, 425 (2023).

[R3] W. Zhao, D. Zhu, Z. Guo, K. Cao, S. Peng, Magnetic Random-Access Memory, 2022-03-31, 美国，US11991933B2。

[R4] 赵巍胜, 朱道乾, 郭宗夏, 曹凯华, 彭守仲, 磁性随机存储器, 2023-02-28, 中国, ZL 202011059916.6。

[R5] S. Peng#, D. Zhu#, W. Li, H. Wu, A. Grutter, D. Gilbert, J. Lu, D. Xiong, W. Cai, P. Shafer, K. Wang and W. Zhao, Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque, Nature Electronics, 3, 757-764 (2020).

[R6] M. Wang#, W. Cai#, D. Zhu#, Z. Wang, J. Kan, Z. Zhao, K. Cao, Z. Wang, Y. Zhang, T. Zhang, C. Park, J. Wang, A. Fert and W. Zhao, Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques, Nature Electronics, 1, 582 (2018).

[R7] A. Du#, D. Zhu#*, Z. Peng, Z. Guo, M. Wang, K. Shi, K. Cao, C. Zhao, and W. Zhao, Electrical Manipulation of Antiferromagnetic Random-Access Memory Device by the Interplay of Spin-Orbit Torque and Spin-Transfer Torque, Advanced Electronic Materials, 2300779 (2024).

[R8] D. Zhu and W. Zhao, Threshold current density for perpendicular magnetization switching through spin-orbit torque, Physical Review Applied, 13, 044078 (2020). 

[R9] Y. Yao#, D. Zhu#*, Q. Xia#, J. Liang, Y. Jiang, Z. Peng, J. Li, C. Xiao, R. Xu, W. Wang, X. Shang, S. Lu, D. Zhu, H. Liu, K. Cao, and W. Zhao, Orbitronics for energy-efficient magnetization switching, SCIENCE CHINA Information Sciences (Letter), 68, 119402 (2025).

     二、招生信息。

    每年招收1-2名硕士研究生，欢迎有器件物理、材料、工艺相关背景的同学加入！