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E-Mail: zahir@buaa.edu.cn

Date of Employment:2024-12-16

School/Department:杭州国际创新研究院

Business Address:3123

Gender:Male

Contact Information:National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China Phone: 13048866186

Status:Employed

Academic Titles:Associate Professor

Alma Mater:University of Science and Technology of China

Discipline:Physics

Zahir Muhammad

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Gender:Male

Alma Mater:University of Science and Technology of China

Research Focus

Current position: Home /Research Focus
Condensed Matter Physics

Condensed Matter Physics 

Single Crystals growth using CVT and Flux growth

Electronic and quantum study: 2D electronic dynamics, Topological superconductivity, Higher order topological states,               topological nodalline semimetals, Weyl Semimetals: studying via ARPES, STM and transport techniques                      

Phonon and Magnon dynamics of 2D, Topological and Kagome metals using Raman and PL techniques 

Electronic and Spintronics devices 

Selected Research Publications: 

  1.  M. S. Hossain, F. Schindler, R. Islam, Z. Muhammad (Equal author), et al. A hybrid topological quantum state in an elemental solid. Nature, 628 (2024), 527–533.

  2.  Z. Muhammad, et al. Electronic Transport and Interaction of Lattice Dynamics in Topological Nodalline Semimetal HfAs2 Single Crystals. Advanced Functional Materials, 34 (2024), 2316775. 

  3. Z. Muhammad, et al. Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se  Substitution. ACS Nano,14(2020), 835-841.

  4. Z. Muhammad, et al. Electron doping induced semiconductor-to-metal transitions in ZrSe2 layers via copper atomic intercalation. Nano Research(2018): 1-9.

  5. Z. Muhammad, et al. Laser Irradiation Effect on p-GaSe/n-HfS2 PN-heterojunction for High Performance                   Phototransistor. ACS Applied Materials and Interfaces 14 (2022), 35927–35939.

  6. Z. Muhammad, et al. Anisotropic phonon dispersion and optoelectronic properties of few layer HfS2. Journal of Materials Chemistry C, 11 (2023), 2608-2618.

  7. Z. Muhammad, et al. Temperature modulating Fermi level pining in two dimensional GeSe for High-Performance Transistor. Advanced Electronic Materials , 8 (2022), 2101112.

  8. Z. Muhammad, et al. Lattice dynamics, optical and thermal properties of quasi-twodimensional anisotropic layered semimetal ZrTe2. Inorganic Chemistry Frontiers, (2021): 3885-3892.

  9. Naseer Ullah Khan, Z Muhammad (Equal author), et al. Ultrasensitive Detection of Exosome Using Biofunctionalized Gold Nanorods on a Silver-Island Film. Nano Letters, 21 (2021): 5532-5539.

  10. Z. Muhammad, et al. Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite. 2D Materials, 10 (2023) 025001.

  11. Z Muhammad, et al. Room- Temperature Multiferroic Properties in Ni-doped-PbTiO3 Nanocrystals. Journal of Alloys and Compounds, 956 (2023): 170337.

  12. Z. Muhammad, et al. Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution. Journal of Alloys and Compounds, 980 (2024), 173616.

  13. Z. Muhammad, et al. Signature of phonon anharmonicity in highly in-plane anisotropic ternary HfGeTe4 single crystals. Applied Physics Letters, 124 (2024), 102201.

  14. Z. U. Rehman, N. Muhammad, Z. Muhammad*, et al. Electronic structure investigation and anisotropic phonon anharmonicity in ternary ZrGeTe4 single crystals. Applied Physics Letters , 125 (2024), 142203.

  15. Azizur Rahman,…. Z. Chen., Z. Muhammad*, and Lei Zhang*. Exploring the tricritical nature and unconventional magnetoresistance in EuCd2P2: An indepth study of complex material characteristics. Physical Review B, 110 (2024), 064407.

  16. M. S. Hossain, R. Islam, Z. Muhammad (equal), Z.-J. Cheng, Q. Zhang, Z. Guguchia, B. Casas, Y.-X. Jiang, M. Litskevich, B. Kim, T. A. Cochran, X. P. Yang, I. E. Perakis, F. Xue, M. Kargarian, W. Zhao, L. Balicas, M. Z. Hasan. Superconductivity and van Hove singularities confined to the surface of a topological semimetal. Nature Communications volume 16, 3998 (2025)



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