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Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect

Release time:2018-08-06Hits:

Journal: IEEE Transactions on Electron Devices

Indexed by: Unit Twenty Basic Research

Document Type: J

Volume: 64

Issue: 12

Page Number: 4919

Translation or Not: no

Date of Publication: 2017-11-08

Included Journals: SCI

Links to published journals: https://ieeexplore.ieee.org/abstract/document/8098650/