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Tianqi Gao,Deming Zhang,Youguang Zhang,Kang L. Wang.Compact Model for Negative Capacitance Enhanced Spintronics Devices.[J]:IEEE Transactions on Electron Devices,2019,66(6):2795-2801

.Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect.[J]:IEEE Transactions on Nanotechnology,2018,17(3):492-499

.Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage.[J]:IEEE Journal of the Electron Devices Society,2018,6:245-249

.Heterogeneous memristive devices enabled by magnetic tunnel junction nanopillars surrounded by resistive silicon switches.[J]:Advanced Electronic Materials,2018,4(3):1700461

.Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect.[J]:IEEE Transactions on Electron Devices,2017,64(12):4919-4927

.Voltage-Gated Spin-Hall Effect based Magnetic Non-volatile Flip-Flop for High Speed, Low Power and Compact Cell Area.[Conference]:2020 IEEE International Symposium on Circuits and Systems (ISCAS 2020),2020

.Low-Power, High-Speed and High-Density Magnetic Non-Volatile SRAM Design with Voltage-Gated Spin-Orbit Torque.[Conference]:2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH 2019),2019

.A Novel 15T-4MTJ based Non-volatile Ternary Content-Addressable Memory Cell for High-Speed, Low-Power and High-Reliable Search Operation.[Conference]:2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2018),2018

.Hardware Acceleration Implementation of Sparse Coding Algorithm with Spintronic Devices.[Conference]:2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH 2018),2018