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    史书园,北京航空航天大学教授、博导,国家优秀青年基金获得者,入选北京市科技新星。本科毕业于哈尔滨工业大学英才学院(前身实验学院)电子信息科学与技术专业,博士毕业于新加坡国立大学,2019-2021年于新加坡国立大学从事博士后研究,先后在韩国科学技术院及美国橡树岭国家实验室交流访问。2021年入职北京航空航天大学,从事自旋电子存储及逻辑器件研究;自旋轨道矩材料及器件研究;拓扑量子材料自旋调控研究等。获2019年国际磁学与磁性材料大会(MMM)最佳口头报告奖(1名每年),2020新加坡微电子学会奖(1名每年)等。近年来以第一/通迅作者发表论文包括Nat. Nanotechnol. 、Nat. Mater. 、Nat. Commun. 、Adv. Mater. 、Adv. Funct. Mater.、Nano Lett. 、Phys. Rev. B (3篇)、Cell子刊等;以合作者身份在Science、Nat. Mater.、Nat. Electron.、PRL等期刊发表论文,已获得美国授权专利2项。

    讲授本科生课程《工科大学物理II》、《半导体材料与器件表征》、本科生科研课堂;指导本科生冯如杯竞赛、大创等本科生项目;讲授研究生课程《自旋电子学前沿进展》。


目前主要研究方向包括:

基于电子自旋的存储与逻辑器件

自旋轨道矩(SOT)材料与器件

自旋电子新材料(拓扑材料、TMD材料、二维铁磁)的自旋调控及功能器件

自旋动力学(ST-FMR,FMR,spin wave,magnon torque, etc.),自旋轨道电子学、反铁磁(Mn3Sn,Mn2Au, etc.)自旋调控等

自旋神经形态器件及计算(ANN, SNN, etc.)

获奖

2019年获国际磁学与磁性材料大会(MMM)最佳口头报告奖(1名每年)

2020年获新加坡微电子学会奖(1名每年)

2021年获北京市科技新星

2022年获国家级海外高层次青年人才

2023年北航优秀硕士论文指导教师


代表性工作包括:

通讯作者:

Phys. Rev. Applied  25 (2), 024066 (2026)

DOI: https://doi.org/10.1103/sr8x-26ls

Appl. Phys. Lett. 127, 022407 (2025)

DOI: https://doi.org/10.1063/5.0273330

Physical Review B 111, 094433 (2025)

DOI: https://doi.org/10.1103/PhysRevB.111.094433

Advanced Quantum Technologies (2025)

DOI:https://doi.org/10.1002/qute.202500016

Nano Letters 24(23), 6931-6938 (2024) IF: 10.8

DOI:https://doi.org/10.1021/acs.nanolett.4c01100

Physical Review B 109 (13), 134433 (2024)

DOI:https://doi.org/10.1103/PhysRevB.109.134433

Advanced Functional Materials 34(3), 2470016 (2023) IF: 19.924 (入选卷首文章Frontispiece)

DOI:https://doi.org/10.1002/adfm.202308219

Cell Reports Physical Science 4(7), 101468 (2023) IF: 8.9 (入选2023Best of physics and engineering collection)

DOI:https://doi.org/10.1016/j.xcrp.2023.101468

Materials Today Electronics 6,100060 (2023)

DOI:https://doi.org/10.1016/j.mtelec.2023.100060


第一作者(或共一)身份:

Nature Nanotechnology 14, 945 (2019, News&Views亮点文章). IF: 40.523

DOI:https://doi.org/10.1038/s41565-019-0525-8

Nature Materials 20, 800 (2021, ESI高被引). IF: 47.656

DOI:https://doi.org/10.1038/s41563-021-00946-z

Nature Communications 10, 1290 (2020). IF: 17.694

DOI:https://doi.org/10.1038/s41467-019-09208-8

Physical Review B 97(4), 041115 (2018,Rapid Communication).

DOI:https://doi.org/10.1103/PhysRevB.97.041115

Advanced Quantum Technologies 4, 2100038 (2021).

DOI:https://doi.org/10.1002/qute.202100038

Advanced Materials 32, e2002799 (2020). 

DOI:https://doi.org/10.1002/adma.202002799 

Physical Review B 111, 094433 (2025)

DOI: https://doi.org/10.1103/PhysRevB.111.094433


合作者:

Physical Review B 109, 094424 (2024) (Editors' Suggestion)

DOI:https://doi.org/10.1103/PhysRevB.109.094424

Nature Electronics 123, 042402 (2023). IF: 33.255

DOI:https://doi.org/10.1038/s41928-023-01039-2

Science 366, 1125 (2019). IF: 63.832 

DOI:https://doi.org/10.1126/science.aav8076

Physical Review Letters 123(1), 016801 (2019).

DOI:https://doi.org/10.1103/PhysRevLett.123.016801

Nature Materials 18, 29 (2019).

DOI:https://doi.org/10.1038/s41563-018-0236-9

Nature Communications 8, 1364 (2017,ESI高被引).

DOI:https://doi.org/10.1038/s41467-017-01583-4


专利:

1.Spin orbit materials for efficient spin current generation, 2021-2-16, 美国, US10923651B2. 已授权

2.Spin torque device having a spin current polarized at a canting angle of out-of-plane spin, 2024-8-27, 美国,US12075708B2. 已授权

3.全电学自旋轨道矩隧道结、存储单元和构筑方法,中国,202310287413.1

4.磁性随机存储单元、存储器及存储单元制作方法,中国,202310954549.3

5.磁随机存储单元结构,中国,202410487062.3


News & Achievements

2026.1

Our paper on the theory and characterization methodologies of spin–orbit torques, led by Fangye Lin, was published in Physical Review Applied.

https://doi.org/10.1103/sr8x-26ls

2025.6

Yongxin Fu completed his M.S. degree. Best wishes for his future endeavors.

2025.3

Two new papers from our group on spin transport in topological insulators and topological semimetals were published. The online versions are available through the links below.

https://doi.org/10.1103/PhysRevB.111.094433

https://doi.org/10.1002/qute.202500016

2025.1

Our first PhD graduate, Dr. Xinran Wang, received several honors including the Beihang Outstanding Graduate Award and a nomination for the Shen Yuan Medal.

2024.6

Our group reported an anomalously strong spin–orbit torque in amorphous Mo with weak spin–orbit coupling and demonstrated SOT-driven switching of perpendicular magnetization with a critical current density comparable to heavy metals such as Pt and W. The work was mainly carried out by Xinran and Ao from our group and published in Nano Letters.

https://doi.org/10.1021/acs.nanolett.4c01100

2024.1

Our first two MSc graduates, Xinhao Huang and Ao Meng, received several honors including the Beijing Outstanding Graduate Award, Beihang Outstanding Graduate Award, and Beihang Excellent Master's Thesis Award.

2024.1

Our paper on field-free magnetization switching was selected as the Front Cover of Advanced Functional Materials and published online on January 15.

Adv Funct Materials.jpg

2024. 3

Our paper on symmetry-breaking-induced field-free switching of perpendicular magnetization in large-area Weyl semimetal WTe₂ was selected for the Cell Reports 2023 Best of Physics and Engineering collection.

best of p n e.jpg

2024.3
Our collaborative work with Prof. A. Manchon (Aix-Marseille University) and Prof. H. Yang (National University of Singapore) on the role of spin leakage in charge–spin interconversion was published in Physical Review B 109, 094424 (2024) and selected as an Editors’ Suggestion.


每年招收若干学术型硕士研究生和博士研究生,对学生自主性有较高要求,同时希望有以下特点:

1. 身心健康、勤奋研学、积极主动、富有责任心;

2. 数理成绩优秀,动手能力强,英语六级及以上;

3. 喜欢科研,打算继续攻读博士;

4. 申请博士的同学有过熟练微纳器件加工与电学测试等经验者优先;

5. 学习过课题组研究方向相关课程例如磁学基础半导体物理、固体物理等;

6. 具备掌握相关软件、程序语言(e.g. Labview, Matlab, Python, Mumax, OOMMF, etc.)的能力;

7. 欢迎微电子、应用物理、凝聚态物理、电子材料背景的同学加入我们!

请感兴趣的本科生、研究生、博士后发邮件到smeshis@buaa.edu.cn

课题组博士生将获得本人亲自推荐前往国外顶尖高校、国际顶尖课题组联合培养、参加国内外学术交流和学术会议等。