Guang YANG, Ph.D.

Associate Professor & Ph.D. Supervisor

Department of Materials and Devices, School of Integrated Circuit Science and Engineering, Beihang University (BUAA)

Dr. Yang received his Bachelor’s degree in Materials Physics from the School of Materials Science and Engineering at the University of Science and Technology Beijing (USTB) in 2011. He subsequently pursued a successive Master-to-Ph.D. program at USTB, focusing on spintronic materials and devices. During his doctoral studies, he underwent joint training at the State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences (CAS), and received his Ph.D. in 2017 (Supervisors: Prof. Guanghua Yu and Prof. Shouguo Wang). From October 2017 to October 2018, he worked as a Postdoctoral Researcher in the Spin and Energy Laboratory at the Department of Electrical and Computer Engineering, National University of Singapore (NUS) (Supervisor: Prof. Hyunsoo Yang). During this time, he collaborated with GlobalFoundries on the testing and development of ultrafast Magnetic Random Access Memory (MRAM). From November 2018 to October 2021, he served as a Postdoctoral Research Associate in the Quantum Materials & Devices Group at the Department of Materials Science and Metallurgy, University of Cambridge (Supervisor: Prof. Jason Robinson, Head of Department). His research there focused on superconducting spintronics. In November 2021, he returned to China to join the faculty at the School of Integrated Circuit Science and Engineering, Beihang University.

Dr. Yang has long been engaged in experimental research involving spintronics, magnetic and superconducting thin film materials, and novel devices for sensing, storage, and computing. He possesses significant experience in industrial collaborative R&D. He has published over 60 SCI papers. His current research is supported by sub-projects of the National Key R&D Program, the National Natural Science Foundation of China (NSFC), the Beijing Natural Science Foundation, the Shandong Provincial Natural Science Foundation, the Beihang "Top 10 Scientific Questions" project, and the Beihang Frontier Interdisciplinary Fund. Previously, he participated as a core member in major projects funded by the Engineering and Physical Sciences Research Council (EPSRC, UK) and joint development projects between NUS and GlobalFoundries.

Research Interests (https://scholar.google.com.sg/citations?user=kq2U65kAAAAJ&hl=zh-CN):

• Superconducting Spintronics and Cryogenic Memory/Logic Devices: While magnetism and superconductivity are mutually exclusive at the macroscopic scale, they can achieve compatibility and synergistic effects at the nanoscale. Through precise thin-film growth and micro-nano processing technologies, we investigate spin-dependent transport characteristics at magnetic/superconducting nano-heterostructure interfaces. This includes the generation, injection, and detection of dissipationless superconducting spin currents, the tunneling transport of supercurrents in magnetic layers, and the magnetic modulation of the superconducting phase. Based on this research, we fabricate novel spin-related cryogenic storage and logic devices—such as superconducting spin valves, magnetic Josephson junctions, and superconducting diodes—laying the foundation for the development of ultra-low-power spintronic devices.

• Process R&D and Application of 8-inch Novel Magnetic Sensors

  Focusing on the process development and application of vortex-type Tunnel Magnetoresistance (TMR) sensors.

• Spin Quantum Materials and Functional Devices

  Investigation of spin quantum materials (e.g., Mn-based spin-polarized antiferromagnets), modulation of device electrical transport properties (e.g., generation, injection, and detection of spin/orbital currents), and functional expansion (e.g., in-memory computing).
  

List of publications since joining Beihang University:

• [21] J. Li, Z. Zhang, S. Wang, Y. He, H. Lyu, Q. Wang, B. Dong, D. Zhu, H. Matsuki, D. Zhu, G. Yang*, and W. Zhao, ''Field-free superconducting diode enabled by geometric asymmetry and perpendicular magnetization,'' Adv. Mater. 11414 (2025).

• [20] T. Luo, Q. Xia, J. Qu, S. Eimer, G. Yang, G. Wei, H. Yang*, D. Zhu*, and W. Zhao, ''Weak temperature dependence of orbital Hall angle in Ta/Ni bilayers,'' Nanotechnology 36, 445201 (2025).

• [19] Y. Bai, W. Cai, Z. Chen, D. Zhu, S. Lu, J. Li, A. Du, K. Cao, G. Yang, H. Liu, K. Shi*, and W. Zhao*, "Ru/IrMn interfacial orbital-to-spin conversion for antiferromagnetic switching in magnetic tunnel junctions," Nano Lett. 25, 14843 (2025).

• [18] H. Matsuki, A. Hijano, G.P. Mazur, S. Ilic, B. Wang, Y. Alekhina, K. Ohnishi, S. Komori, Y. Li, N. Stelmashenko, N. Banerjee, L.F. Cohen, D.W. McComb, F.S. Bergeret, G. Yang*, and J.W.A. Robinson*, "Realisation of de Gennes' absolute superconducting switch with a heavy metal interface," Nat. Commun. 16, 5674 (2025).

• [17] Y. Zhao*, Y. Zhang, J. Qi, Y. Zhao, H. Huang, G. Yang, H. Lyu, B. Shao, J. Zhang, G. Yu, H. Wei, B. Shen, and S. Wang*, "Field-free perpendicular magnetization switching through topological surface state in type-II Dirac semimetal Pt₃Sn," Adv. Mater. 37, 2418663 (2025).

• [16] Y. He, Z. Wang, J. Li, F. Zhong, H. Yang, K. Shi, L. Wang*, G. Yang*, and W. Zhao, "Geometric asymmetry-enhanced nonreciprocal supercurrent transport revealed by second-harmonic response," Adv. Funct. Mater. 35, 2505766 (2025).

• [15] M.-J. Jin*, G. Yang, D.-S. Um, J. Linder, and J.W.A. Robinson*, "Interfacial spin-orbit-coupling-induced strong spin-to-charge conversion at an all-oxide ferromagnetic/quasi-two-dimensional electron gas interface," ACS Appl. Mater. Interfaces 17, 19026 (2025).

• [14] J. Li, J. Zhang, G. Yang*, and W. Zhao*, "Efficient shift of ferromagnetic resonance by superconductor gating," Appl. Phys. Rev. 12, 011419 (2025).

• [13] G. Yang*, W. Zhao*, and S. Wang*, "Spin-related quantum materials and devices," APL Mater. 12, 120402 (2024).

• [12] Z. Qiu, X.-H. Zhou, H. Wang, G. Yang, and T. Yu*, "Persistent nodal magnon-photon polariton in ferromagnetic heterostructures," Phys. Rev. B 110, 184403 (2024).

• [11] S. Jiang*, E. Zhao, X. Zhang, J. Yang, Q. Liu, J. Liu, Y.-F. Lang, Q. Yang, B. Zhou, Y.-Q. Zhao*, Y. Sun*, F. Su*, F. Hou*, and G. Yang*, "Chemical vapor deposited thin palladium sulfide crystals for highly photoresponsive photodetector," Adv. Opt. Mater. 12, 2401624 (2024).

• [10] G. Yang*, Y. Zhao, J. Qi, Y. Zhang, B. Shao, and S. Wang*, "Magnon excitation-induced spin memory loss in epitaxial L1₀-FePt/MgO/L1₀-FePt magnetic tunnel junctions," Appl. Phys. Lett. 125, 092403 (2024).

• [9] R. Ren, Y. Cao*, C. Wang, Y. Guan, S. Liu, L. Wang, Z. Du, C. Feng, Z.A. Bekele, X. Lan, N. Zhang, G. Yang, L. Wang, B. Li, Y. Hu, Y. Liu, S. Parkin*, K. Wang*, and G. Yu*, "Initialization-free and magnetic field-Free spin–orbit p-bits with backhopping-like magnetization switching for probabilistic applications," Nano Lett. 24, 10072 (2024).

• [8] Y.-Q. Zhao, Q. Liu, B.-J. Zhou, G. Yang*, and S.-L. Jiang*, "Two-dimensional metallic CoTe2 flakes for electrocatalytic hydrogen evolution," Rare Met. 43, 5860 (2024).

• [7] J. Qi, Y. Zhao*, Y. Zhang, G. Yang, H. Huang, H. Lyu, B. Shao, J. Zhang, J. Li, T. Zhu, G. Yu, H. Wei, S. Zhou, B. Shen, and S. Wang*, "Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain," Nat. Commun. 15, 4734 (2024).

• [6] D. Meng, S. Chen, C. Ren, J. Li, G. Lan, C. Li, Y. Liu, Y. Su, G. Yu, G. Chai, R. Xiong, W. Zhao, G. Yang*, and S. Liang*, "Field-free spin-orbit torque driven perpendicular magnetization switching of ferrimagnetic layer based on noncollinear antiferromagnetic spin source," Adv. Electron. Mater. 10, 2300665 (2024).

• [5] C. Wu, X. Zhou, G. Zeng, C. Sun, P. Li, J. Li, S. Chen, G. Yang*, and S. Liang*, "Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb," J. Phys. Condens. Matter 35, 415802 (2023).

• [4] J. Qi, Y. Zhao*, H. Huang, Y. Zhang, H. Lyu, G. Yang, J. Zhang, B. Shao, K. Jin, Y. Zhang, H. Wei, B. Shen, and S. Wang*, "Tailoring of the Interfacial Dzyaloshinskii–Moriya interaction in perpendicularly magnetized epitaxial multilayers by crystal engineering," J. Phys. Chem. Lett. 14, 637 (2023).

• [3] Y. He, J. Li, Q. Wang, H. Matsuki, and G. Yang*, "Spin-related superconducting devices for logic and memory applications," Adv. Devices Instrum. 4, 0035 (2023).

• [2] A. Gutfreund*, H. Matsuki, V. Plastovets, A. Noah, L. Gorzawski, N. Fridman, G. Yang, A. Buzdin, O. Millo, J.W.A. Robinson*, and Y. Anahory*, "Direct observation of a superconducting vortex diode," Nat. Commun. 14, 1630 (2023).

• [1] H. Lyu, Y. Zhao*, J. Qi, H. Huang, J. Zhang, G. Yang, Y. Guo, S. Shen, W. Qin, Y. Sun, J. Shen, P. Dou, B. Shao, Y. Zhang, K. Jin, Y. Long, H. Wei, B. Shen, and S. Wang*, "Field-free magnetization switching driven by spin–orbit torque in L1₀-FeCrPt single layer," Adv. Funct. Mater. 32, 2200660 (2022).

Students interested in superconducting spintronics, ultra-low-power spintronic devices, epitaxial thin film growth, and micro/nano-fabrication are welcome to contact me (gy251@#buaa.edu.cn; please remove the '#' when sending)!