Guang Yang, Ph.D., Associate Professor and Ph.D. Supervisor at the School of Integrated Circuits Science and Engineering, Beihang University.

Dr. Yang graduated in 2011 with a bachelor's degree in Materials Physics from the School of Materials Science and Engineering at the University of Science and Technology Beijing. He continued his studies there, pursuing combined master's and doctoral research in spintronic materials and devices. During his doctoral studies, he was jointly trained at the State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences. He obtained his Ph.D. in 2017 under the supervision of Professors Guanghua Yu and Shouguo Wang. From October 2017 to October 2018, he conducted postdoctoral research at the Spin and Energy Lab in the Department of Electrical Engineering at the National University of Singapore, collaborating with Professor Hyunsoo Yang. His work involved collaborating with the Magnetoresistive Random Access Memory (MRAM) research department at GlobalFoundries to test and develop new ultra-fast non-volatile memory to replace traditional static random-access memory (SRAM). From November 2018 to October 2021, he conducted postdoctoral research at the Quantum Materials and Devices Group in the Department of Materials Science at the University of Cambridge, under the supervision of Professor Jason Robinson. His research focused on superconducting spintronics. He joined Beihang University in November 2021.

Dr. Yang has long been engaged in experimental research on magnetic and superconducting thin film materials, spintronics, and magnetic memory, with experience in industrial collaborative R&D. He has published more than 50 SCI papers and is currently working on National Key Research and Development Program of China, young reseach program under the National Natural Science Foundation of China, and the Top Ten Scientific Problems of Beihang University. He has also participated as a core member in major projects funded by the Engineering and Physical Sciences Research Council (EPSRC) of the UK and joint development projects between the National University of Singapore and GlobalFoundries.

Detailed Research Directions (see more at Guang Yang's ResearchGate):

1. Superconducting Spintronics: Magnetism and superconductivity are two mutually exclusive order parameters in nature. However, at the nanoscale, they can be compatible and synergistic. We explore novel spin-dependent transport properties at magnetic/superconducting nano-heterointerfaces through precise thin film growth and micro-nano fabrication: such as the generation, injection, and detection of energy-dissipation-free superconducting spin currents, and the control of superconducting phases by magnetism. Based on this, we develop novel spin-related low-temperature memory devices such as superconducting magnetic tunnel junctions and magnetic Josephson junctions, promoting the evolution of traditional spintronic devices towards ultra-low power consumption (aJ/bit). Our long-term goal is to design superconducting spin memory devices for auxiliary quantum computing at low temperatures (10 mK), integrating spintronics with quantum computing.

• APL Mater. 9, 050703 (2021)

• Sci. Adv. 7, eabe0128 (2021)

• Phys. Rev. Appl. 17, L021002 (2022)

• Appl. Phys. Lett. 116, 130501 (2020)

• Adv. Devices Instrum. 4, 0035 (2023)

2. Electrical Transport Properties and Functional Expansion of Spin Quantum Materials and Devices (e.g., spin-orbit torque and integrated memory-computing devices).

• Nat. Commun. 9, 2569 (2018)

• Nano Lett. 18, 4669 (2018)

• AIP Adv. 11, 015045 (2021)

• Adv. Electron. Mater. 10, 2300665 (2024)

3. Interface-Related Transport Properties and Control of Magnetic Thin Film Heterostructures.

• Appl. Surf. Sci. 396, 705 (2017)

• Appl. Surf. Sci. 387, 375 (2016)

• Appl. Surf. Sci. 353, 489 (2015)

Publications Since Joining Beihang University:

[17]  Y. He, Z. Wang, J. Li, F. Zhong, H. Yang, K. Shi, L. Wang, G. Yang, and W. Zhao, "Geometric Asymmetry-Enhanced Nonreciprocal Supercurrent Transport Revealed by Second-Harmonic Response," arXiv: 2503.03441. (submitted to Adv. Funct. Mater.)

[16]  M.-J. Jin, G. Yang, D.-S. Um, J. Linder, and J.W.A. Robinson, "Interfacial spin-orbit-coupling-induced strong spin-to-charge conversion at an all-oxide ferromagnetic /quasi-two-dimensional electron gas interface," arXiv: 2503.03292. (accepted in ACS Appl. Mater. Interfaces)

[15]  J. Li, J. Zhang, G. Yang, and W. Zhao, "Efficient shift of ferromagnetic resonance by superconductor gating," Appl. Phys. Rev. 12, 011419 (2025).

[14]   G. Yang, W. Zhao, and S. Wang, "Spin-related quantum materials and devices," APL Mater. 12, 120402 (2024).

[13]   Z. Qiu, X.-H. Zhou, H. Wang, G. Yang, and T. Yu, "Persistent nodal magnon-photon polariton in ferromagnetic heterostructures," Phys. Rev. B 110, 184403 (2024).

[12]   H. Matsuki, A. Hijano, G.P. Mazur, S. Ilic, B. Wang, Y. Alekhina, K. Ohnishi, S. Komori, Y. Li, N. Stelmashenko, N. Banerjee, L.F. Cohen, D.W. McComb, F.S. Bergeret, G. Yang, and J.W.A. Robinson, "Realisation of de Gennes' Absolute Superconducting Switch with a Heavy Metal Interface," arXiv:2404.16264. (second round in Nat. Commun.)

[11]   S. Jiang, E. Zhao, X. Zhang, J. Yang, Q. Liu, J. Liu, Y.-F. Lang, Q. Yang, B. Zhou, Y.-Q. Zhao, Y. Sun, F. Su, F. Hou, and G. Yang, "Chemical Vapor Deposited Thin Palladium Sulfide Crystals for Highly Photoresponsive Photodetector," Adv. Opt. Mater. 2401624 (2024).

[10]   G. Yang, Y. Zhao, J. Qi, Y. Zhang, B. Shao, and S. Wang, "Magnon excitation-induced spin memory loss in epitaxial L1₀-FePt/MgO/L10-FePt magnetic tunnel junctions," Appl. Phys. Lett. 125, 092403 (2024).

[9]       R. Ren, Y. Cao, C. Wang, Y. Guan, S. Liu, L. Wang, Z. Du, C. Feng, Z.A. Bekele, X. Lan, N. Zhang, G. Yang, L. Wang, B. Li, Y. Hu, Y. Liu, S. Parkin, K. Wang, and G. Yu, "Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications," Nano Lett. 24, 10072 (2024).

[8]       Y.-Q. Zhao, Q. Liu, B.-J. Zhou, G. Yang, and S.-L. Jiang, "Two-dimensional metallic CoTe2 flakes for electrocatalytic hydrogen evolution," Rare Met. 43, 5860 (2024).

[7]       J. Qi, Y. Zhao, Y. Zhang, G. Yang, H. Huang, H. Lyu, B. Shao, J. Zhang, J. Li, T. Zhu, G. Yu, H. Wei, S. Zhou, B. Shen, and S. Wang, "Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain," Nat. Commun. 15, 4734 (2024).

[6]       D. Meng, S. Chen, C. Ren, J. Li, G. Lan, C. Li, Y. Liu, Y. Su, G. Yu, G. Chai, R. Xiong, W. Zhao, G. Yang, and S. Liang, "Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source," Adv. Electron. Mater. 10, 2300665 (2024).

[5]       C. Wu, X. Zhou, G. Zeng, C. Sun, P. Li, J. Li, S. Chen, G. Yang, and S. Liang, "Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb," J. Phys. Condens. Matter 35, 415802 (2023).

[4]       J. Qi, Y. Zhao, H. Huang, Y. Zhang, H. Lyu, G. Yang, J. Zhang, B. Shao, K. Jin, Y. Zhang, H. Wei, B. Shen, and S. Wang, "Tailoring of the Interfacial Dzyaloshinskii–Moriya Interaction in Perpendicularly Magnetized Epitaxial Multilayers by Crystal Engineering," J. Phys. Chem. Lett. 14, 637 (2023).

[3]       Y. He, J. Li, Q. Wang, H. Matsuki, and G. Yang, "Spin-Related Superconducting Devices for Logic and Memory Applications," Adv. Devices Instrum. 4, 0035 (2023).

[2]       A.Gutfreund, H. Matsuki, V. Plastovets, A. Noah, L. Gorzawski, N. Fridman, G. Yang, A. Buzdin, O. Millo, J.W.A. Robinson, and Y. Anahory, "Direct observation of a superconducting vortex diode," Nat. Commun. 14, 1630 (2023).

[1]       H. Lyu, Y. Zhao, J. Qi, H. Huang, J. Zhang, G. Yang, Y. Guo, S. Shen, W. Qin, Y. Sun, J. Shen, P. Dou, B. Shao, Y. Zhang, K. Jin, Y. Long, H. Wei, B. Shen, and S. Wang, "Field-Free Magnetization Switching Driven by Spin–Orbit Torque in L1₀-FeCrPt Single Layer," Adv. Funct. Mater. 32, 2200660 (2022).

Students interested in superconducting spintronics, ultra-low power spin memory devices, precise material growth, and micro-nano fabrication are welcome to contact me anytime (gy251@#buaa.edu.cn, delete #)!