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Journal:Nanoscale

Key Words:Spintronics, Processing-in-memory, Magnetic tunnel junction

Abstract:Perpendicular magnetic tunnel junctions (p-MTJs) provide advantages such as infinite endurance, high thermal stability, and fast and low-power switching. They are considered as a promising non-volatile memory device to build non-von Neumann computing paradigms and definitively overcome the power bottleneck. Numerous design proposals have been made for p-MTJ logic, but a few physical realizations have been reported. In this paper, we present the experimental implementation of universal stateful logic gates such as “OR”, “AND”, and material implication (“IMP”) by connecting two nanoscale p-MTJs.

Co-author:Wenlong Cai,Yizheng Liu

First Author:Kaihua Cao

Indexed by:Unit Twenty Basic Research

Correspondence Author:Weisheng Zhao

Document Code:10.1039/c8nr05928d

First-Level Discipline:Electronic Science and Technology

Document Type:J

Volume:10

Issue:45

Page Number:21225-21230

ISSN No.:2040-3364

Translation or Not:no

CN No.:451738900031

Date of Publication:2018-12-07

Included Journals:SCI

Links to published journals:https://pubs.rsc.org/en/content/articlelanding/2018/NR/C8NR05928D#!divAbstract

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