点击次数：
影响因子：4.5
DOI码：10.1109/LED.2025.3554009
发表刊物：IEEE ELECTRON DEVICE LETTERS
摘要：Significant progress has been made in developing artificial synapses using transition metal dichalcogenides (TMDs)-based neuromorphic devices, but solution-processable TMDs remain underexplored, especially in utilizing intrinsic defects for synaptic functions. Here, we prepared electrochemically-exfoliated WSe2 nanoflakes with Se vacancies that enable charge trapping and detrapping. Using a solution-processed approach, we fabricated a high-performance WSe2 synaptic transistor with a large memory window, a significant trap density of 5 × 1012 cm−2, and high operating stability. This synaptic transistor also successfully mimics various synaptic behaviors such as potentiation and depression, spike-voltage-dependent plasticity, and spike-number-dependent plasticity. By integrating the device with an infrared ranging sensor, the neuromorphic sensory system achieves 94.7% accuracy in object classification task, demonstrating its potential for advanced sensory processing.
第一作者：Taoyu Zou,Chengpeng Jiang
论文类型：期刊论文
通讯作者：Wentao Xu,Yong-Young Noh
一级学科：电子科学与技术
文献类型：期刊
卷号：46
期号：5
页面范围：765-768
是否译文：否
发表时间：2025-03-28
收录刊物：SCI