Impact Factor:4.5
DOI number:10.1109/LED.2025.3554009
Journal:IEEE ELECTRON DEVICE LETTERS
Abstract:Significant progress has been made in developing artificial synapses using transition metal dichalcogenides (TMDs)-based neuromorphic devices, but solution-processable TMDs remain underexplored, especially in utilizing intrinsic defects for synaptic functions. Here, we prepared electrochemically-exfoliated WSe2 nanoflakes with Se vacancies that enable charge trapping and detrapping. Using a solution-processed approach, we fabricated a high-performance WSe2 synaptic transistor with a large memory window, a significant trap density of 5 × 1012 cm−2, and high operating stability. This synaptic transistor also successfully mimics various synaptic behaviors such as potentiation and depression, spike-voltage-dependent plasticity, and spike-number-dependent plasticity. By integrating the device with an infrared ranging sensor, the neuromorphic sensory system achieves 94.7% accuracy in object classification task, demonstrating its potential for advanced sensory processing.
First Author:Taoyu Zou,Chengpeng Jiang
Indexed by:Journal paper
Correspondence Author:Wentao Xu,Yong-Young Noh
First-Level Discipline:Electronic Science and Technology
Document Type:J
Volume:46
Issue:5
Page Number:765-768
Translation or Not:no
Date of Publication:2025-03-28
Included Journals:SCI