Low Gate Voltage Operated Multi-emitter-dot H + Ion-Sensitive Gated Lateral Bipolar Junction Transistor
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所属单位：School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing
发表刊物：Chinese Physics Letters
合写作者： P. J. Clarke, M. Ding, L. Xu, N. Zhang, C. Zhang, J. Zhang,H. Yuan
论文类型：应用研究
文献类型：期刊
是否译文：否
发表时间：2015-02-01
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