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1.基本信息

姓名：张昆

性别：男

出生年月：1989-12-20

毕业院校：山东大学

学位：理学博士学位

所在单位：集成电路科学与工程学院

主要职务：副教授（教研岗）

学科：微电子学与固体电子学

联系方式：15063398763

办公地点：第一馆二楼222

电子邮箱：Zhang_Kun@buaa.edu.cn

2.科研成果

人工智能、物联网、大数据等新兴应用对芯片的能效、速度与非易失性提出了更高要求，而电子输运相关量子效应在微纳尺度下显著增强，限制了半导体器件的能效提升。在此背景下，基于电子自旋自由度调控的新型自旋电子学器件能够实现低功耗、高速度以及非易失的信息处理和存储，成为作为极具潜力的解决方案。围绕新型自旋电子器件的信息读取、写入以及存内计算应用，开展了器件物理、材料结构与功能验证研究，主要工作如下：

1）针对自旋电子器件读出信号幅值和磁电阻比受限的问题，研究整流隧穿磁电阻及磁隧道结增强的 MESO 读出机制，构建高开关比读取器件，并提高 MESO 器件的输出电压和级联能力；

2）通过磁性多层膜成分梯度和对称性破缺设计，研究体自旋轨道矩驱动的无场磁化翻转及其器件应用，并开展皮秒级全电学垂直磁矩翻转研究，为高速、低功耗信息写入提供器件方案；

3）基于磁隧道结、整流效应和多电阻态构建自旋多态存储单元，实现面向深度神经网络和布尔逻辑的非易失存内计算；进一步研究正交体自旋轨道矩器件，拓展全电学存算一体功能；

4）围绕磁性多层膜中的手性相互作用开展研究，揭示长程体层间 Dzyaloshinskii-Moriya 相互作用，并利用该机制稳定三维拓扑磁织构，为磁性材料与自旋器件中的三维磁结构调控提供物理基础。

目前，以第一作者、共同第一作者或通讯作者在 Nature Communications、Advanced Materials、Advanced Functional Materials、Applied Physics Reviews、Advanced Science、ACS Nano、IEEE Electron Device Letters 等期刊发表论文 23 篇，并且两篇被选为亮点论文，四篇被选为封面文章，合作发表SCI论文50余篇，申请国家发明专利10余项，部分文章如下：

[1] Y. Huang, K. Zhang, G. Liu, X. Ning, S. Lu, S. Xu, Q. Yang, W. Cai, R. Xu, Y. Yao, Y. He, J. Wang, B. Li, H. Yang, K. Shi, K. Cao, C. Zhao, Y. Zhang, and W. Zhao, Giant spin-orbit magnetic state readout enhanced by a magnetic tunnel junction, Nature Communications (2026).（共同第一作者、通讯作者）DOI: 10.1038/s41467-026-73382-9

[2] Y. He, C. Xiao, K. Lin, K. Zhang, B. Zhang, Z. Zheng, Y. Zhang, W. Cai, Z. Song, D. Ma, X. Feng, L. Chen, B. Li, G. Liu, S. Li, X. Zheng, Z. Zhang, J. Chen, and W. Zhao, Picosecond all-electrical perpendicular magnetization switching, Nature Communications (2026).（共同第一作者）DOI: 10.1038/s41467-026-72582-7

[3] B. Li, K. Lin, K. Zhang, Y. Shu, L. Chen, F. Han, Z. Zhang, J. Huang, M. He, Z. Chen, Z. Liu, X. Feng, Y. He, W. Huang, G. Liu, Z. Song, H. Song, Z. Zheng, W. Zhao, and Y. Zhang, Long-Range Bulk-Like Interlayer Dzyaloshinskii-Moriya Interaction Enables Stabilized 3D Magnetic Textures, Advanced Materials 38, e16452 (2026).（共同第一作者、通讯作者）DOI: 10.1002/adma.202516452

[4] Y. Huang, K. Zhang, C. Xiao, Q. Yang, S. Xu, W. Cai, D. Zhu, J. Yang, and W. Zhao, Top Spin-Orbit-Torque Switching of Magnetic Tunnel Junction With In-Situ Efficiency Quantification, IEEE Electron Device Letters 46, 1409-1412 (2025).（通讯作者）DOI: 10.1109/LED.2025.3582335

[5] W. Chen, Y. Lin, K. Zhang, Z. Cao, X. Zhao, Z. Zhou, X. Wang, S. Yan, H. Du, Q. Leng, and S. Yan, Spin orbit torque locally controlling exchange bias to realize high detection sensitivity of two-dimensional magnetic field, Fundamental Research 5, 2505-2510 (2025).（通讯作者）DOI: 10.1016/j.fmre.2023.07.010

[6] L. Chen, K. Zhang, B. Li, B. Hong, W. Huang, Y. He, X. Feng, Z. Zhang, K. Lin, W. Zhao, and Y. Zhang, Engineering Symmetry Breaking Enables Efficient Bulk Spin-Orbit Torque-Driven Perpendicular Magnetization Switching, Advanced Functional Materials 34, 2308823 (2024).（通讯作者）DOI: 10.1002/adfm.202308823

[7] L. Chen, W. Huang, K. Zhang, B. Li, Z. Zhang, X. Feng, K. Lin, Y. He, W. Zhao, and Y. Zhang, Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing, IEEE Electron Device Letters 45, 504-507 (2024).（通讯作者）DOI: 10.1109/LED.2024.3354921

[8] Y. He, W. Chen, B. Hong, W. Huang, K. Zhang, L. Chen, X. Feng, B. Li, G. Liu, X. Sun, M. Zhao, and Y. Zhang, Significant role of thermal effects in current-induced exchange bias field switching at antiferromagnet/ferromagnet interface, Acta Physica Sinica 73, 027501 (2024).（通讯作者）DOI: 10.7498/aps.73.20231374

[9] Z. Li, K. Zhang, A. Du, H. Zhang, W. Chen, N. Xu, R. Hao, S. Yan, W. Zhao, and Q. Leng, High repetition granular Co/Pt multilayers with improved perpendicular remanent magnetization for high-density magnetic recording, Chinese Physics B 32, 026803 (2023).（通讯作者）DOI: 10.1088/1674-1056/ac9fc1

[10] Y. Huang, K. Cao, K. Zhang, J. Wang, K. Shi, Z. Hao, W. Cai, A. Du, J. Yin, Q. Yang, J. Li, J. Gao, C. Zhao, and W. Zhao, Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory, Science China Information Sciences 66, 162402 (2023).（通讯作者）DOI: 10.1007/s11432-021-3562-8

[11] W. Chen, S. Yan, Z. Cao, S. Lu, X. Zhao, R. Hao, Z. Zhou, Z. Li, K. Zhang, S. Yan, and Q. Leng, Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling, Science China Information Sciences 66, 149402 (2023).（通讯作者）DOI: 10.1007/s11432-021-3467-5

[12] Z. Zheng, Z. Zhang, X. Feng, K. Zhang, Y. Zhang, Y. He, L. Chen, K. Lin, Y. Zhang, P. Khalili Amiri, and W. Zhao, Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory, ACS Nano 16, 8264-8272 (2022).（共同第一作者）DOI: 10.1021/acsnano.2c02031

[13] K. Zhang, L. Chen, Y. Zhang, B. Hong, Y. He, K. Lin, Z. Zhang, Z. Zheng, X. Feng, Y. Zhang, Y. Otani, and W. Zhao, Efficient and Controllable Magnetization Switching Induced by Intermixing-Enhanced Bulk Spin-Orbit Torque in Ferromagnetic Multilayers, Applied Physics Reviews 9, 011407 (2022).（第一作者，亮点论文）DOI: 10.1063/5.0067348

[14] Z. Li, K. Zhang, L. Shen, X. Xie, W. Chen, Z. Zhou, L. Lu, M. Liu, S. Yan, W. Zhao, and Q. Leng, Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization, ACS Applied Electronic Materials 4, 4033-4041 (2022，封面论文).（通讯作者）DOI: 10.1021/acsaelm.2c00672

[15] K. Zhang, X. Jia, K. Cao, J. Wang, Y. Zhang, K. Lin, L. Chen, X. Feng, Z. Zheng, Z. Zhang, Y. Zhang, and W. Zhao, High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network, Advanced Science 9, 2103357 (2022).（第一作者，封面论文）DOI: 10.1002/advs.202103357

[16] R. Hao, K. Zhang, Y. Li, Q. Cao, X. Zhang, D. Zhu, and W. Zhao, Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement, Chinese Physics B 31, 017502 (2022).（共同第一作者，亮点论文）DOI: 10.1088/1674-1056/ac21bb

[17] R. Hao, K. Zhang, W. Chen, J. Qu, S. Kang, X. Zhang, D. Zhu, and W. Zhao, Significant Role of Interfacial Spin-Orbit Coupling in the Spin-to-Charge Conversion in Pt/NiFe Heterostructure, ACS Applied Materials & Interfaces 14, 57321-57327 (2022).（共同第一作者）DOI: 10.1021/acsami.2c13434

[18] J. Nan, K. Zhang, Y. Zhang, S. Yan, Z. Zhang, Z. Zheng, G. Wang, Q. Leng, Y. Zhang, and W. Zhao, A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic, IEEE Access 8, 87584-87591 (2020).（共同第一作者）DOI: 10.1109/ACCESS.2020.2993460

[19] K. Zhang, K. Cao, Y. Zhang, Z. Huang, W. Cai, J. Wang, J. Nan, G. Wang, Z. Zheng, L. Chen, Z. Zhang, Y. Zhang, S. Yan, and W. Zhao, Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing, IEEE Electron Device Letters 41, 928-931 (2020，封面论文).（第一作者）DOI: 10.1109/LED.2020.2987211

[20] K. Zhang, Y. Zhang, Z. Zhang, Z. Zheng, G. Wang, Y. Zhang, Q. Liu, S. Yan, and W. Zhao, Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device, Advanced Electronic Materials 5, 1800812 (2019，封面论文).（第一作者）DOI: 10.1002/aelm.201800812

[21] K. Zhang, Q. Huang, Y. Yan, X. Wang, J. Wang, S. Kang, and Y. Tian, Rectification Magnetoresistance Device: Experimental Realization and Theoretical Simulation, Applied Physics Letters 109, 213503 (2016).（第一作者）DOI: 10.1063/1.4968784

[22] K. Zhang, Y. Cao, Y. Fang, Q. Li, J. Zhang, C. Duan, S. Yan, Y. Tian, R. Huang, R. Zheng, S. Kang, Y. Chen, G. Liu, and L. Mei, Electrical Control of Memristance and Magnetoresistance in Oxide Magnetic Tunnel Junctions, Nanoscale 7, 6334-6339 (2015).（第一作者）DOI: 10.1039/C5NR00522A

[23] K. Zhang, H. Li, P. Grünberg, Q. Li, S. Ye, Y. Tian, S. Yan, Z. Lin, S. Kang, Y. Chen, G. Liu, and L. Mei, Large Rectification Magnetoresistance in Nonmagnetic Al/Ge/Al Heterojunctions, Scientific Reports 5, 14249 (2015).（第一作者）DOI: 10.1038/srep14249

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