Zhang Boyu, Assistant Professor in School of Integrated Circuit Science and Engineering, Beihang University. In 2012, he received the bachelor's degree in Information and Computing Science, and was awarded the title of "Outstanding Graduate" of Beihang University. In 2015, he received the master's degree in Electronic Science and Technology and Diplôme d'Ingénieur from Beihang University. 4 years later, he received a double Ph.D. degree in microelectronics and solid-state electronics from Beihang University and in Physics from Université Paris-Saclay, during which he received the National Scholarship, the China Scholarship Council scholarship and the Beihang Excellent Doctoral Dissertation. He went to French National Centre for Scientific Research (CNRS) after graduation for post-doctoral research. Then, in 2020, he joined the School of Integrated Circuit Science and Engineering, Beihang University.

He focuses on the study of ultrafast magnetism, spintronics, magnetic random access memory, etc. He has participated in the installation, construction and commissioning of a high-precision 15-target magnetron sputtering equipment. He is in charge of the double chamber magnetron sputtering system in the Center for Micro-Nano Innovation of Beihang University. He has participated in the research and development of core equipment of integrated circuit, "Optical Kerr Measuring Instrument" and "Single atomic layer magnetron sputtering system". He has observed for the first time the joint effect femtosecond laser and current pulses on domain wall motion, which can be used for the research and development of low-power racetrack memory, which was evaluated by two review articles in Physics Reports (2021 Impact Factor: 30.51) as "to improve functionality of spintronics devices with the help of photoferroics and laser pulses" and "the DW motion becomes more energy-efficient (∼50% reduction in power consumption) when the optical switching method is combined with STT or SOT", respectively.

He has published more than 10 papers in high-level SCI journals, such as SCIENCE CHINA Physics, Mechanics & Astronomy, Physical Review Applied, Advanced Electronic Materials, Physical Review B, with citations of more than 200 times. He is the second author of the monograph "Spintronic Science and Technology", which is within the "14th Five-Year Plan" of the Ministry of Industry and Information Technology. He has given oral reports and poster presentations at the International Magnetic Conference (INTERMAG), Ultrafast Magnetics Conference, etc. He has obtained 8 issued Chinese invention patents, and 4 of them were transferred to Huawei (1 patent), Truth Memory (2 patents) and Truth Instruments (1 patent).

He hosts the Youth Science Fund Project from National Natural Science Foundation of China and the Concept Validation Project from Administrative Commission of Zhongguancun Science Park. He has also participated in a number of projects from National Natural Science Foundation of China and French National Research Agency (ANR). He lectures in a postgraduate professional theoretical course "Vacuum Technology and Thin Film Deposition" (32 class hours), and participated in the teaching of the undergraduate core professional course "Integrated Circuit Technology Principles". In 2021, he won the gold medal of the 7th China International College Students' "Internet+" Innovation and Entrepreneurship Competition (ranking the third in a team of 7 people). In 2022, he won the "Excellent Innovation and Entrepreneurship Mentor" in the semi-finals of the 8th China International College Students’ "Internet+" Innovation and Entrepreneurship Competition.


Research projects
[1] Youth Science Fund Project, National Natural Science Foundation of China, 2022/01-2024/12, ¥ 300,000.
[2] Concept Validation Project, Zhongguancun Open Laboratory, Administrative Commission of Zhongguancun Science Park, 2021/12-2023/11, ¥ 1,000,000.


Research interests

[1] Deposition and Modulation of Magnetic Thin Films

[2] Antiferromagnetic Spintronic Devices

[3] Ultrafast Optoelectronic Magnetization Switching

Publication List
[1] H. Cheng, B. Zhang*, Y. Xu*, S. Lu, Y. Yao, R. Xiao, K. Cao, Y. Liu, Z. Wang, R. Xu, D. Xiong, Y. Wang, H. Ma, S. Eimer, C. Zhao, W. Zhao*, "Mo-based Perpendicularly Magnetized Thin Films with Low-damping for Fast and Low-power Consumption Magnetic Memory", SCIENCE CHINA Physics, Mechanics & Astronomy, 2022.
[2] B. Zhang, D. Zhu, Y. Xu, X. Lin, M. Hehn, G. Malinowski, W. Zhao*, S. Mangin*, "Optoelectronic domain-wall motion for logic computing", Applied Physics Letters, 2020, 116(25): 252403.
[3] B. Zhang, Y. Xu, W. Zhao*, D. Zhu, X. Lin, M. Hehn, G. Malinowski, D. Ravelosona, S. Mangin, "Energy-Efficient Domain-Wall Motion Governed by the Interplay of Helicity-Dependent Optical Effect and Spin-Orbit Torque", Physical Review Applied, 2019, 11(3): 034001.
[4] B. Zhang, Y. Xu, W. Zhao*, D. Zhu, H. Yang, X. Lin, M. Hehn, G. Malinowski, N. Vernier, D. Ravelosona, S. Mangin, "Domain-wall motion induced by spin transfer torque delivered by helicity-dependent femtosecond laser", Physical Review B, 2019, 99(14): 144402.
[5] B. Zhang, A. Cao, J. Qiao, M. Tang, K. Cao, X. Zhao, S. Eimer, Z. Si, N. Lei, Z. Wang, X. Lin*, Z. Zhang, M. Wu, W. Zhao*, "Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures", Applied Physics Letters, 2017, 110(1): 012405.
[6] J. Wei, B. Zhang, M. Hehn, W. Zhang, G. Malinowski, Y. Xu, W. Zhao*, S. Mangin*, "All-optical Helicity-Independent Switching State Diagram in Gd-Fe-Co Alloys", Physical Review Applied, 2021, 15(5), 054065.
[7] H. Yang, B. Zhang, X. Zhang, X. Yan, W. Cai, Y. Zhao, J. Sun, K. Wang, D. Zhu*, W. Zhao*, "Giant Charge-to-Spin Conversion Efficiency in SrTiO3-Based Electron Gas Interface", Physical Review Applied, 2019, 12(3): 034004.
[8] X. Zhao, B. Zhang, N. Vernier, X. Zhang, M. Sall, T. Xing, L. Herrera-Diez, C. Hepburn, L. Wang, G. Durin, A. Casiraghi, M. Belmeguenai, Y. Roussigné, A. Stashkevich, S. Chérif, J. Langer, B. Ocker, S. Jaiswal, G. Jakob, M. Klaui, W. Zhao*, D. Ravelosona*, "Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy", Applied Physics Letters, 2019, 115(12): 122404.
[9] W. Zhao*, X. Zhao, B. Zhang, K. Cao, L. Wang, W. Kang, Q. Shi, M. Wang, Y. Zhang, Y. Wang, S. Peng, J.-O. Klein, L. A. de Barros Naviner, D. Ravelosona, "Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy", Materials, 2016, 9(1): 41.
[10] H. Cheng, J. Chen, S. Peng, B. Zhang, Z. Wang, D. Zhu, K. Shi, S. Eimer, X. Wang, Z. Guo, Y. Xu, D. Xiong, K. Cao, W. Zhao*, "Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions", Advanced Electronic Materials, 2020, 6(8): 2000271.
[11] S. Peng, D. Zhu, J. Zhou, B. Zhang, A. Cao, M. Wang, W. Cai, K. Cao, W. Zhao*, "Modulation of heavy metal/ferromagnetic metal interface for high-performance spintronic devices", Advanced Electronic Materials, 2019, 5(8): 1900134.
[12] P. Liu, X. Lin, Y. Xu, B. Zhang, Z. Si, K. Cao, J. Wei, W. Zhao*, "Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application", Materials, 2018, 11(1): 47.
[13] X. Fan, M. Hehn, G. Wei, G. Malinowski, T. Huang, Y. Xu, B. Zhang, W. Zhang, X. Lin*, W. Zhao*, S. Mangin*, "On/Off Ultra‐Short Spin Current for Single Pulse Magnetization Reversal in a Magnetic Memory Using VO2 Phase Transition", Advanced Electronic Materials, 2022, 8(10): 2200114.