史书园，北京航空航天大学教授、博导，国家优秀青年科学基金获得者，入选北京市科技新星。本科毕业于哈尔滨工业大学英才学院(现未来技术学院)电子信息科学与技术专业，博士毕业于新加坡国立大学，2019-2021年于新加坡国立大学从事博士后研究，先后在韩国科学技术院及美国橡树岭国家实验室交访问。2021年入职北京航空航天大学，从事自旋电子存储及逻辑器件研究；自旋轨道矩材料及神经形态器件研究；拓扑量子材料自旋调控研究等。获2019年国际磁学与磁性材料大会（MMM）最佳博士生报告奖(MMM Best Student Presentation Award)（1名每年)，2020新加坡微电子学会奖(1名每年)，新加坡国立大学最佳博士学位论文奖(1名每年)等。近年来以第一/通迅作者发表论文包括Nat. Nanotechnol. 、Nat. Mater. 、Nat. Commun. 、Adv. Mater. 、Adv. Funct. Mater.、Nano Lett. 、Phys. Rev. B/Appl. (4篇)、Cell子刊等；以合作者身份在Science、Nat. Mater.、Nat. Electron.、PRL等期刊发表论文，获得美国授权专利2项。

    讲授本科生课程《工科大学物理II》、《半导体材料与器件表征》、本科生科研课堂；讲授研究生课程《集成电路前沿进展》《高等半导体材料与器件表征》。

目前主要研究方向包括：

基于电子自旋的存储与逻辑器件

自旋轨道矩（SOT）材料与器件

自旋电子新材料（拓扑材料、TMD材料、二维铁磁）的自旋调控及功能器件

自旋动力学（ST-FMR，FMR，spin wave，magnon torque, etc.），自旋轨道电子学、反铁磁（Mn₃Sn，Mn₂Au, etc.）自旋调控等

自旋神经形态器件及计算（ANN, SNN, etc.）

获奖

2019年获国际磁学与磁性材料大会（MMM）最佳口头报告奖（1名每年)

2020年获新加坡微电子学会奖（1名每年）

2021年获北京市科技新星

2022年获国家级海外高层次青年人才

2023年北航优秀硕士论文指导教师

2025年国家卓越工程师学院优秀导师组导师

News & Achievements from our group:

2026.10

Congratulations to Xiaying Ji on the publication of her paper in Journal of Applied Physics. During her first year of Ph.D. study, Xiaying demonstrated through simulations how carefully coordinated electrical pulses can switch tiny magnets without an external magnetic field. Going a step further, her work showed how a single magnetic device could perform all 16 possible two-input logic functions, exploring new possibilities for compact, reconfigurable computing. Read more https://doi.org/10.1063/5.0321501

2026.9

Congratulations to Xing Liu on the publication of his paper in Applied Physics Letters. During his first year of M.S. study, Xing completed research exploring how brain-inspired artificial intelligence can work reliably with real-world spintronic hardware. By compensating for imperfections in the devices, his work achieved over 95% accuracy in heartbeat signal classification, bringing brain-inspired computing closer to practical applications. Read more  https://doi.org/10.1063/5.0355051

2026.8

Congratulations to Runqiu Tian on the publication of the review “Carbon Nanotubes for Spintronics: Structural Engineering, Spin Manipulation, and Hybrid Device Opportunities” in Giant. The review explores how carbon nanotubes can be engineered to control electron spin and combined with other materials to create new opportunities for spin-based electronic devices. Read more  https://doi.org/10.1016/j.giant.2026.100419

2026.1

Congratulations to Fangye Lin on leading a study published in Physical Review Applied. Fangye extended a widely used electrical measurement technique to reveal more complex spin–orbit torques, including unconventional effects that can help researchers understand how to switch magnets without an external magnetic field. His work provides a more comprehensive framework for measuring these subtle magnetic effects and designing next-generation spintronic devices. Read more https://doi.org/10.1103/sr8x-26ls

2025.6

Yongxin Fu completed his M.S. degree. Best wishes for his future endeavors.

2025.3

Our group published two papers exploring how advanced quantum materials can help control the flow of electron spin, opening new possibilities for future memory and computing technologies. In Physical Review B, we uncovered why converting electrical signals into spin currents can be dramatically more efficient than converting them back, revealing the important role of spin loss at material interfaces. In Advanced Quantum Technologies, we developed a method to grow large-area, few-layer MoTe₂ films, demonstrating highly efficient spin-current generation and an unconventional magnetic effect that could enable new types of spintronic devices.

Read more: https://doi.org/10.1103/PhysRevB.111.094433, https://doi.org/10.1002/qute.202500016

2025.1

Our first PhD graduate, Dr. Xinran Wang, received several honors including the Beihang Outstanding Graduate Award and a nomination for the Shen Yuan Medal.

2024.6

Congratulations to Xinran Wang and Ao Meng on their publication in Nano Letters. Their work revealed that amorphous molybdenum (Mo), despite its relatively weak spin–orbit coupling, can generate two strong types of spin–orbit torque, with the field-like torque more than three times stronger than the damping-like torque. These effects enable efficient electrical switching of magnetization, offering new possibilities for energy-efficient magnetic memory devices. 

Read more: https://doi.org/10.1021/acs.nanolett.4c01100

2024.1

Our first two MSc graduates, Xinhao Huang and Ao Meng, received several honors including the Beijing Outstanding Graduate Award, Beihang Outstanding Graduate Award, and Beihang Excellent Master's Thesis Award.

2024.1

Our paper on field-free magnetization switching was selected as the Front Cover of Advanced Functional Materials and published online on January 15.

2024. 3

Our work on field-free magnetization switching using large-area, few-layer WTe₂ was selected for the Cell Reports 2023 Best of Physics and Engineering collection. Unlike conventional materials, WTe₂ has an unusual, asymmetric crystal structure that allows an electric current to generate a distinctive spin effect, enabling tiny magnets to be switched at room temperature without an external magnetic field. By demonstrating this effect in large-area films compatible with magnetic memory technology, our work brings this unique two-dimensional material a step closer to practical applications.

2024.3

Our collaborative work with Prof. Aurélien Manchon (Aix-Marseille University) and Prof. Hyunsoo Yang (National University of Singapore) on the role of spin leakage in charge–spin interconversion was published in Physical Review B 109, 094424 (2024) and selected as an Editors’ Suggestion.

2023.9 

Our review on emerging two-dimensional materials for spintronics was published in Materials Today Electronics. We explored how materials only a few atoms thick can harness the spin of electrons—not just their electrical charge—to control and process information. The review highlights exciting opportunities for building smaller, faster, and more energy-efficient magnetic memory and computing devices. 

Read more: https://doi.org/10.1016/j.mtelec.2023.100060

代表性工作包括：

第一作者：

Nature Nanotechnology 14, 945 (2019, News&Views亮点文章). IF: 40.523

DOI:https://doi.org/10.1038/s41565-019-0525-8

Nature Materials 20, 800 (2021, ESI高被引). IF: 47.656

DOI:https://doi.org/10.1038/s41563-021-00946-z

Nature Communications 10, 1290 (2020). IF: 17.694

DOI:https://doi.org/10.1038/s41467-019-09208-8

Physical Review B 97(4), 041115 (2018，Rapid Communication).

DOI:https://doi.org/10.1103/PhysRevB.97.041115

Advanced Quantum Technologies 4, 2100038 (2021).

DOI:https://doi.org/10.1002/qute.202100038

Advanced Materials 32, e2002799 (2020). 

DOI:https://doi.org/10.1002/adma.202002799 

Physical Review B 111, 094433 (2025)

DOI: https://doi.org/10.1103/PhysRevB.111.094433

通讯作者：

J. Appl. Phys. 140, 163901 (2026)

DOI: https://doi.org/10.1063/5.0321501

Appl. Phys. Lett. 129, 152402 (2026)

DOI: https://doi.org/10.1063/5.0355051

GIANT  30, 100419 (2026)

DOI: https://doi.org/10.1016/j.giant.2026.100419

Phys. Rev. Appl.  25 (2), 024066 (2026)

DOI: https://doi.org/10.1103/sr8x-26ls

Appl. Phys. Lett. 127, 022407 (2025)

DOI: https://doi.org/10.1063/5.0273330

Phys. Rev. B 111, 094433 (2025)

DOI: https://doi.org/10.1103/PhysRevB.111.094433

Adv. Quantum Technol. (2025)

DOI:https://doi.org/10.1002/qute.202500016

Nano Lett. 24(23), 6931-6938 (2024) IF: 10.8

DOI:https://doi.org/10.1021/acs.nanolett.4c01100

Phys. Rev. B 109 (13), 134433 (2024)

DOI:https://doi.org/10.1103/PhysRevB.109.134433

Advanced Functional Materials 34(3), 2470016 (2023) IF: 19.924 （入选卷首文章Frontispiece）

DOI:https://doi.org/10.1002/adfm.202308219

Cell Reports Physical Science 4(7), 101468 (2023) IF: 8.9 （入选2023Best of physics and engineering collection）

DOI:https://doi.org/10.1016/j.xcrp.2023.101468

Materials Today Electronics 6,100060 (2023)

DOI:https://doi.org/10.1016/j.mtelec.2023.100060

合作者：

Physical Review B 109, 094424 (2024) (Editors' Suggestion)

DOI:https://doi.org/10.1103/PhysRevB.109.094424

Nature Electronics 123, 042402 (2023). IF: 33.255

DOI:https://doi.org/10.1038/s41928-023-01039-2

Science 366, 1125 (2019). IF: 63.832 

DOI:https://doi.org/10.1126/science.aav8076

Physical Review Letters 123(1), 016801 (2019).

DOI:https://doi.org/10.1103/PhysRevLett.123.016801

Nature Materials 18, 29 (2019).

DOI:https://doi.org/10.1038/s41563-018-0236-9

Nature Communications 8, 1364 (2017，ESI高被引).

DOI:https://doi.org/10.1038/s41467-017-01583-4

专利：

1.Spin orbit materials for efficient spin current generation, 2021-2-16, 美国, US10923651B2. 已授权

2.Spin torque device having a spin current polarized at a canting angle of out-of-plane spin, 2024-8-27, 美国,US12075708B2. 已授权

3.全电学自旋轨道矩隧道结、存储单元和构筑方法，中国，202310287413.1

4.磁性随机存储单元、存储器及存储单元制作方法，中国，202310954549.3

5.磁随机存储单元结构，中国，202410487062.3

6.一种用于自旋轨道矩器件的双电流磁矩翻转方法、装置及自旋轨道矩器件，中国，202511597956.9

课题组每年招收若干具有自我驱动力的硕士研究生和博士研究生。希望申请者具备以下特点：

1. 品行端正、身心健康、勤奋研学、积极主动、富有责任心；

2. 数理成绩优秀，动手能力强，英语六级及以上；

3. 喜欢科研，打算继续攻读博士；

4. 申请博士的同学有过熟练微纳器件加工与电学测试等经验者优先；

5. 学习过课题组研究方向相关课程例如磁学基础、半导体物理、固体物理等；

6. 具备掌握相关软件、程序语言（e.g. Labview, Matlab, Python, Mumax, OOMMF, etc.）的能力；

7. 欢迎微电子、应用物理、凝聚态物理、电子材料背景的同学加入我们！

请感兴趣的本科生、研究生、博士后发邮件到smeshis@buaa.edu.cn

课题组博士生将获得本人亲自推荐前往国外顶尖高校、国际顶尖课题组联合培养、参加国内外学术交流和学术会议等。

[1].

基金委、教育部、科技部、发改委科技/人才项目评审专家

[2].

《Moore and More》期刊青年编委

[3].

2023全球制造业峰会 | 工业芯片技术与应用论坛特邀主持人

[4].

2022MMM会议（2022国际磁学与磁性材料大会）分会主席

[5].

Nature子刊、APS、ACS、Wiley旗下期刊审稿人

[6].

2021Intermag会议（2021国际磁学年会）分会主席