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  • Doctor's Degree
  • 微电子学院
 

Education Experience

Job Experience

 

Introduction

2014年获得北京航空航天大学(微电子学)与法国南巴黎大学(物理学)的双博士学位,获北航优秀博士生,北航优秀博士论文,北航优秀博士后;

2018年入选北京航空航天大学“卓越百人”青年人才引进计划;

研究方向:基于自旋电子学的非易失性存储与逻辑芯片,以及新型计算体系架构;

已发表Book Chapter 2个;学术论文100余篇, 其中第一作者/通信作者SCI期刊论文40余篇,包括Proc. IEEE, Nanoscale, IEEE EDL, IEEE TED, IEEE TCAS-I, IEEE TCOM, IEEE TNANO, IEEE TMAG, APL, Nanotechnology等;第一作者/通信作者国际会议论文20余篇,包括IEDM, InterMAG, MMM, DAC, DATE等等,ESI 高被引与热点论文1篇;国际邀请报告10余个,最佳会议论文1篇,最佳论文候选者2篇;申请发明专利15项,已授权8项; 被索引1000余次(Google Scholar统计);

主持国家自然科学基金-面上项目1项,国家自然科学基金-青年基金1项,博士后基金-特别资助1项,博士后基金-面上基金1项,华为导航项目一项;参与科研项目10余项,包括国家自然科学基金,北京市科技专项,欧盟FP-7,法国科研署等;

Microelectronics Journal客座编辑,获邀成为Nature子刊、IEEE、IET与Elsevier等20余个国际期刊及会议的审稿人,如IEEE TED, IEEE TCAS-I, IEEE TVLSI, IEEE TNANO等;

指导研究生获清华类脑大赛国际创新大赛一等奖;国家奖学金2名;优秀毕业生2名。

Google Scholar 主页:https://scholar.google.com/citations?user=3LIpXSoAAAAJ&hl=zh-CN

Researchgate 主页:https://www.researchgate.net/profile/Wang_Kang9?ev=prf_highl 


10 篇代表性论文:

[1] W. Kang, Y. Huang, X. Zhang, Y. Zhou, and W. Zhao, “Skyrmion-Electronics: An Overview and Outlook,” Proceedings of the IEEE, vol. 104, no. 10, pp. 2040-2061, Oct. 2016.

[2] W. Kang, L. Zhang, W. Zhao, J. O. Klein, Y. Zhang, D. R. Ravolosona, and C. Chappert, “Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 1, no. 99, pp. 1-13, Dec. 2014.

[3] W. Kang, C. Zheng, Y. Huang, X. Zhang, Y. Zhou, W. Lv, and W. Zhao, “Complementary Skyrmion Racetrack Memory with Voltage Manipulation,” IEEE Electron Device Letters, vol. 37, no. 7, pp. 924-927, Jun. 2016.

[4] W. Kang, T. Pang, W. Lv, and W. Zhao, “A Dynamic Dual-Reference Sensing Scheme for Deep Submicrometer STT-MRAM,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 64, no. 1, pp. 122-132, Jan. 2017. 

[5] W. Kang, L. Chang, Z. Wang, W. Lv, G. Sun, and W. Zhao, “Pseudo-Differential Sensing Framework for STT-MRAM: A Cross-Layer Perspective,” IEEE Transactions on Computers, vol. PP, no. 99, pp. 1-1, Jan. 2016.

[6] W. Kang, Z. Wang, Y. Zhang, J. O. Klein, W. Lv, and W. Zhao, “Spintronic Logic Design Methodology Based on Spin Hall Effect-Driven Magnetic Tunnel Juncitons,” Journal of Physics D: Applied Physics, vol. 49, no. 065008, pp. 1-11, Feb. 2016.

[7] W. Kang, C. Zheng, Y. Huang, X. Zhang, W. Lv, Y. Zhou, and W. Zhao, “Compact Modeling and Evaluation of Magnetic Skyrmion-based Racetrack Memory,” IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1060 - 1068, 2017.

[8] W. Kang, Y. Ran, Y. Zhang, W. Lv and W. Zhao, "Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications," in IEEE Transactions on Nanotechnology, vol. 16, no. 3, pp. 387-395, May 2017.

[9] W. Kang, L. Zhang, J. O. Klein, Y. Zhang, D. R. Ravolosona, and W. Zhao, “Reconfigurable Codesign of STT-MRAM under Process Variations in Deeply Scaled Technology,” IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 1769-1777, Mar. 2015.

[10] W. Kang, W. Lv, Y. Zhang, and W. Zhao, “Low Store Power, High Speed, High Density, Nonvolatile SRAM Design with Spin Hall Effect-Driven Magnetic Tunnel Junctions,” IEEE Transactions on Nanotechnology, vol. 16, no. 1, pp. 148-154, Dec. 2016.


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  • Graduated University:北京航空航天大学,法国南巴黎大学(Univ. Paris-Sud)
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  • Office Location:柏彦大厦1919室
  • Contact:Email: wang.kang@buaa.edu.cn Wechat: w-kane
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