Dr. Zhaohao WANG received his PhD degree from Univ. Paris-Saclay, France in October 2015.  He has become a faculty member at Beihang University, China since March 2016. His research interests include spintronics devices, circuit design and process integration for MRAM, etc.

Dr. Zhaohao WANG has published more than 100 scientific papers. He has more than 30 issued patents. His main research works were carried out with a focus on spintronics. At the device level, he has developed electrical models for emerging devices such as spin orbit torque magnetic tunnel junction and memristor. Also he has designed some novel energy-efficient or high-speed spintronics devices based on magnetization dynamics theories and micromagnetic simulation. At the circuit/architecture level, he has designed a variety of read/write/computing circuits and architectures for MRAM, aiming to overcome the speed and power bottlenecks suffered by the conventional CMOS schemes. At the process integration level, he has fabricated SOT-MRAM chips based on 200 mm spintronics/CMOS technology platform.

Dr. Zhaohao WANG is an IEEE senior member. He serves on the editorial board of IET Electronics Letters, TPC member of VlSI-SoC (2020-2022). He is the referee of many journals, including IEEE Trans. Circuits Syst. I, IEEE Trans. Circuits Syst. II, IEEE Electron Device Lett, IEEE Trans. on Nanotech, Appl. Phys. Lett, etc.

His research summary could be found in the attached file below.

Research Summary.pdf 

His publication list could be found at:

ResearchGate Homepage：https://www.researchgate.net/profile/Zhaohao_Wang3

Google Scholar Homepage：scholar.google.com/citations?user=Z5Ht64QAAAAJ&hl=zh-CN