长期从事自旋电子学、新型信息器件及其非传统计算等领域的交叉研究，首次实验发现自旋协同矩效应，研发了国际上首个皮秒级超快磁存储单元器件，构建了超高速、低功耗全自旋脉冲神经硬件网络。以一作/通讯作者发表Nature Electronics、Nature Communications、Science Advances、Advanced Materials、Nano Letters等高水平SCI论文17篇，含ESI高被引论文1篇，谷歌学术引用2600余次，申请发明专利10项(已授权5项)。面向国产集成电路设备自主可控需求，攻克了晶圆级磁存储器测试系统和皮秒级超快电学测试系统两项关键设备。入选博新计划，主持国自然青C项目，参与多项国自然重大项目及科技部重点研发项目，获北京市自然科学一等奖、北航校级优秀博士毕业论文等奖励。

主要研究方向包括：

1、新型自旋信息器件及其超快磁动态特性

2、自旋振荡器

3、自旋器件的非传统计算

教育与工作经历

欢迎具有物理、电子、材料或人工智能背景的同学加入！

一作/通讯代表性论文：

[1]      Xiao C^#, Cai W^#*, et al. Picosecond Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque[J]. Science Advances, 2026. (共同一作、通讯作者)

[2]      Chen Z, Cai W*, et al. Nanoscale exchange-bias magnetic tunnel junctions enabled memristive synapse and leaky-integrate-fire neuron for neuromorphic computing[J]. Nature Communications, 2026. (通讯作者)

[3]      Wang Z, Cai W*, et al. Radiofrequency Spintronic Neural Network Enabled by Electrically Modulated Magnetic Tunnel Junctions[J]. Advanced Materials, e10319, 2025. (通讯作者)

[4]      Zhu D, Cai W*, et al. Thermally Driven Leaky-Integrate-and-Fire Spintronic Neurons with Stray-Field-Enabled Self-Reset for Neuromorphic Computing[J]. IEEE Electron Device Letters, 2025. (通讯作者)

[5]      Xu F, Cai W*, et al. Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories[J]. Applied Physics Letters, 2025, 126(23). (通讯作者)

[6]      Cai W^#, et al. Spintronics intelligent devices[J]. Science China Physics, Mechanics & Astronomy, 2023, 66(11): 117503.

[7]      Cai W^#, et al. Angular dependent auto-oscillations by spin-transfer and spin-orbit torques in three-terminal magnetic tunnel junctions[J]. IEEE Electron Device Letters, 2023, 44(5): 861-864.

[8]      Cai W^#, Wang M, Cao K, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions[J]. Science China Information Sciences, 2022, 65(2): 122406.

[9]      Cai W^#, Shi K, Zhuo Y, et al. Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques[J]. IEEE Electron Device Letters, 2021, 42(5): 704-707. (引用56次)

[10]   Wang M^#, Cai W^#, Zhu D, et al. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques[J]. Nature electronics, 2018, 1(11): 582-588. (ESI高被引论文，引用461次)

[11]   Zhang X^#, Cai W^#, Wang M, et al. Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing[J]. Advanced Science, 2021, 8(10): 2004645. (引用76次)

[12]   Bai Y^#, Cai W^#, et al. Ru/IrMn Interfacial Orbital-to-Spin Conversion for Antiferromagnetic Switching in Magnetic Tunnel Junctions[J]. Nano Letters, 2025.

[13]   Liu Y^#, Cai W^#, et al. Experiment Demonstration of Novel Strong PUF With SOT P-Bit as Dynamic Entropy Source[J]. IEEE Transactions on Electron Devices, 2025.

[14]   Bai Y^#, Cai W^#, Wang M, et al. Current-induced Néel order switching in a W/IrMn heterostructure[J]. Physical Review B, 2025, 111(18): 184405.

[15]   Shi K^#, Cai W^#, Jiang S, et al. Observation of magnetic droplets in magnetic tunnel junctions[J]. Science China Physics, Mechanics & Astronomy, 2022, 65(2): 227511.

[16]   Zhang Y^#, Cai W^#, Kang W, et al. Demonstration of multi-state memory device combining resistive and magnetic switching behaviors[J]. IEEE Electron Device Letters, 2018, 39(5): 684-687.

[17]   Shi K^#, Cai W^#, Zhuo Y, et al. Experimental demonstration of NAND-like spin-torque memory unit[J]. IEEE Electron Device Letters, 2021, 42(4): 513-516.

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